Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga + ions with fluences of 1 × 1016-1.5 × 10 17 cm-2 followed by post-annealing treatment at 750 °C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga+-implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the InxGa 1-xP phase is formed at a critical fluence of 7 × 1016 cm-2. The newly grown phase was identified with the appearance of Ga rich TOInP and In rich TOGaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 2011 Feb 1|
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics