Optical properties of Mn in regrown GaN-based epitaxial layers

Feng Wen Huang, Jinn Kong Sheu, Shang Ju Tu, Po Cheng Chen, Yu Hsiang Yeh, Ming Lun Lee, Wei Chih Lai, Wen Che Tsai, Wen Hao Chang

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5 Citations (Scopus)


The memory effect and redistribution of manganese (Mn) into subsequently regrown GaN-based epitaxial layers by metalorganic chemical vapor deposition were revealed. Low-temperature up-converted photoluminescence (UPL) and the secondary ion mass spectrometry were performed on GaN-based epitaxial samples with and without Mn doping to study the effect of residual Mn on optical property. UPL emission, which originated from residual Mn doping in regrown InGaN quantum wells (QWs) because of the memory effect of the reactor, could be eliminated in an air-exposed and H2-baking manner prior to the regrowth of the QWs. Considerable residual Mn background level and slow decay rate of Mn concentration tail were also observed in the regrown epitaxial layers, which could be attributed to the memory effect or surface segregation and diffusion from the Mn-doped underlying layer during regrowth in the Mnfree reactor.

Original languageEnglish
Pages (from-to)469-477
Number of pages9
JournalOptical Materials Express
Issue number4
Publication statusPublished - 2012 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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