Abstract
Five pairs of ZnO/Zn0.9Mg0.1O multiple quantum wells (MQWs) with fixed barrier thickness of 55 nm and three well widths of 4, 8 and 16 nm have been grown on m-plane sapphires by pulsed laser deposition. Due to 2D quantum confinement with decreasing well width, the emission of excitons bound to the basal-plane stacking faults, which are one-dimensionally confined in MQWs, encounters larger blue shift than that of the near-band edge excitons. Furthermore, remarkably reducing coupling of free excitons with A 1 longitudinal optical phonons is closely correlated with increasing exciton binding energy but enhanced coupling of E 2-low phonons is a result of increasing interaction with the interface phonons with decreasing well width.
Original language | English |
---|---|
Article number | 095105 |
Journal | Journal of Physics D: Applied Physics |
Volume | 49 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2016 Feb 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films