Optical properties of strained SimGen monolayer superlattices grown on Si(100) substrates by molecular beam epitaxy

Y. D. Woo; H. I. Lee; T. W. Kang; T. W. Kim; K. L. Wang

doi:10.1016/0038-1098(95)00503-X

Optical properties of strained Si_mGe_n monolayer superlattices grown on Si(100) substrates by molecular beam epitaxy

Y. D. Woo, H. I. Lee, T. W. Kang, T. W. Kim, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Raman spectroscopy measurements were carried out to investigate the optical properties of strained Si_mGe_n monolayer superlattices grown by molecular beam epitaxy. The results of the Raman spectroscopy show that several Raman frequencies appear. Also, the peak position of Raman frequencies are in the good agreement with the theoretical values obtained using the deformation theory and elastic continuous model. Energy dispersion of the acoustic phonon was represented.

Original language	English
Pages (from-to)	975-979
Number of pages	5
Journal	Solid State Communications
Volume	96
Issue number	12
DOIs	https://doi.org/10.1016/0038-1098(95)00503-X
Publication status	Published - 1995 Dec

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(95)00503-X

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@article{93b13dd32c8e4a14a51a6bb263d9d08a,

title = "Optical properties of strained SimGen monolayer superlattices grown on Si(100) substrates by molecular beam epitaxy",

abstract = "Raman spectroscopy measurements were carried out to investigate the optical properties of strained SimGen monolayer superlattices grown by molecular beam epitaxy. The results of the Raman spectroscopy show that several Raman frequencies appear. Also, the peak position of Raman frequencies are in the good agreement with the theoretical values obtained using the deformation theory and elastic continuous model. Energy dispersion of the acoustic phonon was represented.",

author = "Woo, {Y. D.} and Lee, {H. I.} and Kang, {T. W.} and Kim, {T. W.} and Wang, {K. L.}",

note = "Funding Information: Acknowledgement - This work was supported in part by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center at Jeonbuk National University.",

year = "1995",

month = dec,

doi = "10.1016/0038-1098(95)00503-X",

language = "English",

volume = "96",

pages = "975--979",

journal = "Solid State Communications",

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publisher = "Elsevier Limited",

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T1 - Optical properties of strained SimGen monolayer superlattices grown on Si(100) substrates by molecular beam epitaxy

AU - Woo, Y. D.

AU - Lee, H. I.

AU - Kang, T. W.

AU - Kim, T. W.

AU - Wang, K. L.

N1 - Funding Information: Acknowledgement - This work was supported in part by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center at Jeonbuk National University.

PY - 1995/12

Y1 - 1995/12

N2 - Raman spectroscopy measurements were carried out to investigate the optical properties of strained SimGen monolayer superlattices grown by molecular beam epitaxy. The results of the Raman spectroscopy show that several Raman frequencies appear. Also, the peak position of Raman frequencies are in the good agreement with the theoretical values obtained using the deformation theory and elastic continuous model. Energy dispersion of the acoustic phonon was represented.

AB - Raman spectroscopy measurements were carried out to investigate the optical properties of strained SimGen monolayer superlattices grown by molecular beam epitaxy. The results of the Raman spectroscopy show that several Raman frequencies appear. Also, the peak position of Raman frequencies are in the good agreement with the theoretical values obtained using the deformation theory and elastic continuous model. Energy dispersion of the acoustic phonon was represented.

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DO - 10.1016/0038-1098(95)00503-X

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VL - 96

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JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

Optical properties of strained Si_mGe_n monolayer superlattices grown on Si(100) substrates by molecular beam epitaxy

Abstract

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