Abstract
The optical properties of near ultraviolet light emitting diodes (UV LED) fabricated by ZnO/GaN heterostructures were discussed. The ZnO films were grown by ablating sintered ZnO with pulsed Nd:YAG laser. Current-voltage (I-V) photoluminescence (PL) and electroluminescence (EL) measurements were performed. The results show emission peaks which are centered at 3.229 eV and 3.394 eV when electroluminescence spectrum was studied.
Original language | English |
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Pages (from-to) | 4713-4715 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2003 Dec 8 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)