The optical properties of near ultraviolet light emitting diodes (UV LED) fabricated by ZnO/GaN heterostructures were discussed. The ZnO films were grown by ablating sintered ZnO with pulsed Nd:YAG laser. Current-voltage (I-V) photoluminescence (PL) and electroluminescence (EL) measurements were performed. The results show emission peaks which are centered at 3.229 eV and 3.394 eV when electroluminescence spectrum was studied.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)