Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

Qing Xuan Yu, Bo Xu, Qi Hong Wu, Yuan Liao, Guan Zhong Wang, Rong Chuan Fang, Hsin Ying Lee, Ching Ting Lee

Research output: Contribution to journalArticle

118 Citations (Scopus)

Abstract

The optical properties of near ultraviolet light emitting diodes (UV LED) fabricated by ZnO/GaN heterostructures were discussed. The ZnO films were grown by ablating sintered ZnO with pulsed Nd:YAG laser. Current-voltage (I-V) photoluminescence (PL) and electroluminescence (EL) measurements were performed. The results show emission peaks which are centered at 3.229 eV and 3.394 eV when electroluminescence spectrum was studied.

Original languageEnglish
Pages (from-to)4713-4715
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number23
DOIs
Publication statusPublished - 2003 Dec 8

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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