Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

Qing Xuan Yu; Bo Xu; Qi Hong Wu; Yuan Liao; Guan Zhong Wang; Rong Chuan Fang; Hsin Ying Lee; Ching Ting Lee

doi:10.1063/1.1632029

Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

Qing Xuan Yu, Bo Xu, Qi Hong Wu, Yuan Liao, Guan Zhong Wang, Rong Chuan Fang, Hsin Ying Lee, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

119 Citations (Scopus)

Abstract

The optical properties of near ultraviolet light emitting diodes (UV LED) fabricated by ZnO/GaN heterostructures were discussed. The ZnO films were grown by ablating sintered ZnO with pulsed Nd:YAG laser. Current-voltage (I-V) photoluminescence (PL) and electroluminescence (EL) measurements were performed. The results show emission peaks which are centered at 3.229 eV and 3.394 eV when electroluminescence spectrum was studied.

Original language	English
Pages (from-to)	4713-4715
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	23
DOIs	https://doi.org/10.1063/1.1632029
Publication status	Published - 2003 Dec 8

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1632029

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title = "Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode",

abstract = "The optical properties of near ultraviolet light emitting diodes (UV LED) fabricated by ZnO/GaN heterostructures were discussed. The ZnO films were grown by ablating sintered ZnO with pulsed Nd:YAG laser. Current-voltage (I-V) photoluminescence (PL) and electroluminescence (EL) measurements were performed. The results show emission peaks which are centered at 3.229 eV and 3.394 eV when electroluminescence spectrum was studied.",

author = "Yu, {Qing Xuan} and Bo Xu and Wu, {Qi Hong} and Yuan Liao and Wang, {Guan Zhong} and Fang, {Rong Chuan} and Lee, {Hsin Ying} and Lee, {Ching Ting}",

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T1 - Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

AU - Yu, Qing Xuan

AU - Xu, Bo

AU - Wu, Qi Hong

AU - Liao, Yuan

AU - Wang, Guan Zhong

AU - Fang, Rong Chuan

AU - Lee, Hsin Ying

AU - Lee, Ching Ting

PY - 2003/12/8

Y1 - 2003/12/8

N2 - The optical properties of near ultraviolet light emitting diodes (UV LED) fabricated by ZnO/GaN heterostructures were discussed. The ZnO films were grown by ablating sintered ZnO with pulsed Nd:YAG laser. Current-voltage (I-V) photoluminescence (PL) and electroluminescence (EL) measurements were performed. The results show emission peaks which are centered at 3.229 eV and 3.394 eV when electroluminescence spectrum was studied.

AB - The optical properties of near ultraviolet light emitting diodes (UV LED) fabricated by ZnO/GaN heterostructures were discussed. The ZnO films were grown by ablating sintered ZnO with pulsed Nd:YAG laser. Current-voltage (I-V) photoluminescence (PL) and electroluminescence (EL) measurements were performed. The results show emission peaks which are centered at 3.229 eV and 3.394 eV when electroluminescence spectrum was studied.

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U2 - 10.1063/1.1632029

DO - 10.1063/1.1632029

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SP - 4713

EP - 4715

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

Abstract

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