Optical reflection spectroscopy for characterizing defects in high-quality CVD graphene on copper

Cheng Lung Chung, Pinyi Li, Chih Chun Chang, Yuchun Chen, Dong Ming Wu, Yon-Hua Tzeng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Graphene is known to be an excellent diffusion barrier for practically all gas atoms and molecules including oxygen. Therefore, a defect free graphene grown on copper prevents the oxidation of copper in air even for months. On the other hand, some defects in CVD graphene allow oxygen to penetrate and oxidize copper beneath the graphene. Copper oxide thus formed reduces the reflectivity of visible light especially in the short wavelength range and tarnishes the graphene covered copper. The wavelength dependent reduction on light reflectivity is sensitive to the types, density, and distribution of defects in CVD graphene. In comparison, micro-Raman spectroscopy usually measures Raman scattering at small spots of laser illumination. As long as the laser illuminated area is defect free, the presence of defects in other parts of the graphene is not detected. Since these defects affect adversely the overall electronic properties, an effective and simple means of detecting defects and domain boundaries is desirable. Instead of expensive fabrication of devices for measuring the electron mobility and the Raman scattering characterization, we demonstrate a simple and effective means based on optical refection spectroscopy to effectively differentiate high quality graphene from poor quality graphene by measuring the wavelength dependent reflectivity of graphene on copper at the ambient temperature or at an elevated temperature to accelerate the penetration of oxygen through defects for the oxidation of copper heating the graphene.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1258-1261
Number of pages4
ISBN (Electronic)9781467381550
DOIs
Publication statusPublished - 2015 Jan 1
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 2015 Jul 272015 Jul 30

Publication series

NameIEEE-NANO 2015 - 15th International Conference on Nanotechnology

Other

Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period15-07-2715-07-30

Fingerprint

Graphite
Graphene
Copper
Chemical vapor deposition
Spectroscopy
Defects
Oxygen
Wavelength
Raman scattering
Oxidation
Diffusion barriers
Copper oxides
Lasers
Electron mobility
Electronic properties
Raman spectroscopy
Lighting
Gases
Heating
Fabrication

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Chung, C. L., Li, P., Chang, C. C., Chen, Y., Wu, D. M., & Tzeng, Y-H. (2015). Optical reflection spectroscopy for characterizing defects in high-quality CVD graphene on copper. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 1258-1261). [7388859] (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388859
Chung, Cheng Lung ; Li, Pinyi ; Chang, Chih Chun ; Chen, Yuchun ; Wu, Dong Ming ; Tzeng, Yon-Hua. / Optical reflection spectroscopy for characterizing defects in high-quality CVD graphene on copper. IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 1258-1261 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).
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abstract = "Graphene is known to be an excellent diffusion barrier for practically all gas atoms and molecules including oxygen. Therefore, a defect free graphene grown on copper prevents the oxidation of copper in air even for months. On the other hand, some defects in CVD graphene allow oxygen to penetrate and oxidize copper beneath the graphene. Copper oxide thus formed reduces the reflectivity of visible light especially in the short wavelength range and tarnishes the graphene covered copper. The wavelength dependent reduction on light reflectivity is sensitive to the types, density, and distribution of defects in CVD graphene. In comparison, micro-Raman spectroscopy usually measures Raman scattering at small spots of laser illumination. As long as the laser illuminated area is defect free, the presence of defects in other parts of the graphene is not detected. Since these defects affect adversely the overall electronic properties, an effective and simple means of detecting defects and domain boundaries is desirable. Instead of expensive fabrication of devices for measuring the electron mobility and the Raman scattering characterization, we demonstrate a simple and effective means based on optical refection spectroscopy to effectively differentiate high quality graphene from poor quality graphene by measuring the wavelength dependent reflectivity of graphene on copper at the ambient temperature or at an elevated temperature to accelerate the penetration of oxygen through defects for the oxidation of copper heating the graphene.",
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Chung, CL, Li, P, Chang, CC, Chen, Y, Wu, DM & Tzeng, Y-H 2015, Optical reflection spectroscopy for characterizing defects in high-quality CVD graphene on copper. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388859, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 1258-1261, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 15-07-27. https://doi.org/10.1109/NANO.2015.7388859

Optical reflection spectroscopy for characterizing defects in high-quality CVD graphene on copper. / Chung, Cheng Lung; Li, Pinyi; Chang, Chih Chun; Chen, Yuchun; Wu, Dong Ming; Tzeng, Yon-Hua.

IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1258-1261 7388859 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Graphene is known to be an excellent diffusion barrier for practically all gas atoms and molecules including oxygen. Therefore, a defect free graphene grown on copper prevents the oxidation of copper in air even for months. On the other hand, some defects in CVD graphene allow oxygen to penetrate and oxidize copper beneath the graphene. Copper oxide thus formed reduces the reflectivity of visible light especially in the short wavelength range and tarnishes the graphene covered copper. The wavelength dependent reduction on light reflectivity is sensitive to the types, density, and distribution of defects in CVD graphene. In comparison, micro-Raman spectroscopy usually measures Raman scattering at small spots of laser illumination. As long as the laser illuminated area is defect free, the presence of defects in other parts of the graphene is not detected. Since these defects affect adversely the overall electronic properties, an effective and simple means of detecting defects and domain boundaries is desirable. Instead of expensive fabrication of devices for measuring the electron mobility and the Raman scattering characterization, we demonstrate a simple and effective means based on optical refection spectroscopy to effectively differentiate high quality graphene from poor quality graphene by measuring the wavelength dependent reflectivity of graphene on copper at the ambient temperature or at an elevated temperature to accelerate the penetration of oxygen through defects for the oxidation of copper heating the graphene.

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Chung CL, Li P, Chang CC, Chen Y, Wu DM, Tzeng Y-H. Optical reflection spectroscopy for characterizing defects in high-quality CVD graphene on copper. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1258-1261. 7388859. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). https://doi.org/10.1109/NANO.2015.7388859