Optical Second-Harmonic Generation from Unbiased Single Ga1-xAlxAs Quantum Wells with Symmetric Structures

Juh Tzeng Lue, Kuang-Yao Lo, Chin Ching Tzeng

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Nonlinear optical susceptibilities of various quantum-well Ga1-xAlxAs compounds grown by molecular beam epitaxy are measured by pumping with a Q-switched and mode-locked Nd: YAG laser. The contribution of second-harmonic waves from the bulk nonlinear susceptibility and the electrical dipole sheet in the quantum well is also calculated separately. The measured second-harmonic reflectivity decreases as the silicon doping concentration increases and its angular variation follows the Bloembergen and Pershan (BP) theory. Both the experimental and theoretical results indicate that the electron gas and dipole sheet in the unbiased single quantum wells have a negligible effect on the second-order nonlinear generation.

Original languageEnglish
Pages (from-to)302-307
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume28
Issue number1
DOIs
Publication statusPublished - 1992 Jan 1

Fingerprint

Harmonic generation
Semiconductor quantum wells
harmonic generations
quantum wells
dipoles
magnetic permeability
harmonics
Pumping (laser)
Electron gas
Laser modes
Molecular beam epitaxy
electron gas
YAG lasers
pumping
molecular beam epitaxy
Doping (additives)
reflectance
Silicon
Lasers
silicon

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Optical Second-Harmonic Generation from Unbiased Single Ga1-xAlxAs Quantum Wells with Symmetric Structures. / Lue, Juh Tzeng; Lo, Kuang-Yao; Tzeng, Chin Ching.

In: IEEE Journal of Quantum Electronics, Vol. 28, No. 1, 01.01.1992, p. 302-307.

Research output: Contribution to journalArticle

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