Optical Second-Harmonic Generation from Unbiased Single Ga1-xAlxAs Quantum Wells with Symmetric Structures

Juh Tzeng Lue; Kuang Yao Lo; Chin Ching Tzeng

doi:10.1109/3.119528

Optical Second-Harmonic Generation from Unbiased Single Ga1-xAlxAs Quantum Wells with Symmetric Structures

Juh Tzeng Lue
, Kuang Yao Lo
, Chin Ching Tzeng

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Nonlinear optical susceptibilities of various quantum-well Ga1-xAlxAs compounds grown by molecular beam epitaxy are measured by pumping with a Q-switched and mode-locked Nd: YAG laser. The contribution of second-harmonic waves from the bulk nonlinear susceptibility and the electrical dipole sheet in the quantum well is also calculated separately. The measured second-harmonic reflectivity decreases as the silicon doping concentration increases and its angular variation follows the Bloembergen and Pershan (BP) theory. Both the experimental and theoretical results indicate that the electron gas and dipole sheet in the unbiased single quantum wells have a negligible effect on the second-order nonlinear generation.

Original language	English
Pages (from-to)	302-307
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	28
Issue number	1
DOIs	https://doi.org/10.1109/3.119528
Publication status	Published - 1992 Jan

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.119528

Cite this

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title = "Optical Second-Harmonic Generation from Unbiased Single Ga1-xAlxAs Quantum Wells with Symmetric Structures",

abstract = "Nonlinear optical susceptibilities of various quantum-well Ga1-xAlxAs compounds grown by molecular beam epitaxy are measured by pumping with a Q-switched and mode-locked Nd: YAG laser. The contribution of second-harmonic waves from the bulk nonlinear susceptibility and the electrical dipole sheet in the quantum well is also calculated separately. The measured second-harmonic reflectivity decreases as the silicon doping concentration increases and its angular variation follows the Bloembergen and Pershan (BP) theory. Both the experimental and theoretical results indicate that the electron gas and dipole sheet in the unbiased single quantum wells have a negligible effect on the second-order nonlinear generation.",

author = "Lue, \{Juh Tzeng\} and Lo, \{Kuang Yao\} and Tzeng, \{Chin Ching\}",

note = "Funding Information: Manuscript received February 13, 1990; revised July 22, 1991. This work was supported by the National Science Council of the Republic of China. The authors are with the Department of Physics, National Tsing Hua University, Hsinchu, Taiwan, Republic of China. IEEE Log Number 9103673.",

year = "1992",

month = jan,

doi = "10.1109/3.119528",

language = "English",

volume = "28",

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journal = "IEEE Journal of Quantum Electronics",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Optical Second-Harmonic Generation from Unbiased Single Ga1-xAlxAs Quantum Wells with Symmetric Structures

AU - Lue, Juh Tzeng

AU - Lo, Kuang Yao

AU - Tzeng, Chin Ching

N1 - Funding Information: Manuscript received February 13, 1990; revised July 22, 1991. This work was supported by the National Science Council of the Republic of China. The authors are with the Department of Physics, National Tsing Hua University, Hsinchu, Taiwan, Republic of China. IEEE Log Number 9103673.

PY - 1992/1

Y1 - 1992/1

N2 - Nonlinear optical susceptibilities of various quantum-well Ga1-xAlxAs compounds grown by molecular beam epitaxy are measured by pumping with a Q-switched and mode-locked Nd: YAG laser. The contribution of second-harmonic waves from the bulk nonlinear susceptibility and the electrical dipole sheet in the quantum well is also calculated separately. The measured second-harmonic reflectivity decreases as the silicon doping concentration increases and its angular variation follows the Bloembergen and Pershan (BP) theory. Both the experimental and theoretical results indicate that the electron gas and dipole sheet in the unbiased single quantum wells have a negligible effect on the second-order nonlinear generation.

AB - Nonlinear optical susceptibilities of various quantum-well Ga1-xAlxAs compounds grown by molecular beam epitaxy are measured by pumping with a Q-switched and mode-locked Nd: YAG laser. The contribution of second-harmonic waves from the bulk nonlinear susceptibility and the electrical dipole sheet in the quantum well is also calculated separately. The measured second-harmonic reflectivity decreases as the silicon doping concentration increases and its angular variation follows the Bloembergen and Pershan (BP) theory. Both the experimental and theoretical results indicate that the electron gas and dipole sheet in the unbiased single quantum wells have a negligible effect on the second-order nonlinear generation.

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JF - IEEE Journal of Quantum Electronics

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Optical Second-Harmonic Generation from Unbiased Single Ga1-xAlxAs Quantum Wells with Symmetric Structures

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