Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor

Ching Sung Lee, Bo Yi Chou, Wei Chou Hsu, Sheng Yuan Chu, Der Yu Lin, Chiu Sheng Ho, Yin Lai Lai, Shen Han Yang, Wei Ting Chien

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

Original languageEnglish
Title of host publication2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
DOIs
Publication statusPublished - 2010
EventInternational Symposium on Photonics and Optoelectronics, SOPO 2010 - Chengdu, China
Duration: 2010 Jun 192010 Jun 21

Publication series

Name2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings

Other

OtherInternational Symposium on Photonics and Optoelectronics, SOPO 2010
Country/TerritoryChina
CityChengdu
Period10-06-1910-06-21

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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