Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor

Ching Sung Lee; Bo Yi Chou; Wei-Chou Hsu; Sheng-Yuan Chu; Der Yu Lin; Chiu Sheng Ho; Yin Lai Lai; Shen Han Yang; Wei Ting Chien

doi:10.1109/SOPO.2010.5504370

Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al_0.2Ga_0.8As/In_0.2Ga_0.8As high electron mobility transistor

Ching Sung Lee, Bo Yi Chou, Wei-Chou Hsu, Sheng-Yuan Chu, Der Yu Lin, Chiu Sheng Ho, Yin Lai Lai, Shen Han Yang, Wei Ting Chien

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al_0.2Ga_0.8As /In_0.2Ga _0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

Original language	English
Title of host publication	2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
DOIs	https://doi.org/10.1109/SOPO.2010.5504370
Publication status	Published - 2010 Jul 30
Event	International Symposium on Photonics and Optoelectronics, SOPO 2010 - Chengdu, China Duration: 2010 Jun 19 → 2010 Jun 21

Publication series

Name	2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings

Other

Other	International Symposium on Photonics and Optoelectronics, SOPO 2010
Country	China
City	Chengdu
Period	10-06-19 → 10-06-21

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/SOPO.2010.5504370

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Lee, C. S., Chou, B. Y., Hsu, W-C., Chu, S-Y., Lin, D. Y., Ho, C. S., Lai, Y. L., Yang, S. H., & Chien, W. T. (2010). Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al_0.2Ga_0.8As/In_0.2Ga_0.8As high electron mobility transistor. In 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings [5504370] (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings). https://doi.org/10.1109/SOPO.2010.5504370

Lee, Ching Sung ; Chou, Bo Yi ; Hsu, Wei-Chou ; Chu, Sheng-Yuan ; Lin, Der Yu ; Ho, Chiu Sheng ; Lai, Yin Lai ; Yang, Shen Han ; Chien, Wei Ting. / Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al_0.2Ga_0.8As/In_0.2Ga_0.8As high electron mobility transistor. 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings. 2010. (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings).

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title = "Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor",

abstract = "A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.",

author = "Lee, {Ching Sung} and Chou, {Bo Yi} and Wei-Chou Hsu and Sheng-Yuan Chu and Lin, {Der Yu} and Ho, {Chiu Sheng} and Lai, {Yin Lai} and Yang, {Shen Han} and Chien, {Wei Ting}",

year = "2010",

month = jul,

day = "30",

doi = "10.1109/SOPO.2010.5504370",

language = "English",

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series = "2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings",

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note = "International Symposium on Photonics and Optoelectronics, SOPO 2010 ; Conference date: 19-06-2010 Through 21-06-2010",

}

Lee, CS, Chou, BY, Hsu, W-C , Chu, S-Y, Lin, DY, Ho, CS, Lai, YL, Yang, SH & Chien, WT 2010, Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al_0.2Ga_0.8As/In_0.2Ga_0.8As high electron mobility transistor. in 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings., 5504370, 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings, International Symposium on Photonics and Optoelectronics, SOPO 2010, Chengdu, China, 10-06-19. https://doi.org/10.1109/SOPO.2010.5504370

Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al_0.2Ga_0.8As/In_0.2Ga_0.8As high electron mobility transistor. / Lee, Ching Sung; Chou, Bo Yi; Hsu, Wei-Chou ; Chu, Sheng-Yuan; Lin, Der Yu; Ho, Chiu Sheng; Lai, Yin Lai; Yang, Shen Han; Chien, Wei Ting.

2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings. 2010. 5504370 (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Chu, Sheng-Yuan

AU - Lin, Der Yu

AU - Ho, Chiu Sheng

AU - Lai, Yin Lai

AU - Yang, Shen Han

AU - Chien, Wei Ting

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N2 - A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

AB - A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

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Lee CS, Chou BY, Hsu W-C , Chu S-Y, Lin DY, Ho CS et al. Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al_0.2Ga_0.8As/In_0.2Ga_0.8As high electron mobility transistor. In 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings. 2010. 5504370. (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings). https://doi.org/10.1109/SOPO.2010.5504370