Abstract
A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.
| Original language | English |
|---|---|
| Title of host publication | 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings |
| DOIs | |
| Publication status | Published - 2010 Jul 30 |
| Event | International Symposium on Photonics and Optoelectronics, SOPO 2010 - Chengdu, China Duration: 2010 Jun 19 → 2010 Jun 21 |
Publication series
| Name | 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings |
|---|
Other
| Other | International Symposium on Photonics and Optoelectronics, SOPO 2010 |
|---|---|
| Country | China |
| City | Chengdu |
| Period | 10-06-19 → 10-06-21 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
}
Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. / Lee, Ching Sung; Chou, Bo Yi; Hsu, Wei-Chou; Chu, Sheng-Yuan; Lin, Der Yu; Ho, Chiu Sheng; Lai, Yin Lai; Yang, Shen Han; Chien, Wei Ting.
2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings. 2010. 5504370 (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor
AU - Lee, Ching Sung
AU - Chou, Bo Yi
AU - Hsu, Wei-Chou
AU - Chu, Sheng-Yuan
AU - Lin, Der Yu
AU - Ho, Chiu Sheng
AU - Lai, Yin Lai
AU - Yang, Shen Han
AU - Chien, Wei Ting
PY - 2010/7/30
Y1 - 2010/7/30
N2 - A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.
AB - A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.
UR - http://www.scopus.com/inward/record.url?scp=77954948164&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77954948164&partnerID=8YFLogxK
U2 - 10.1109/SOPO.2010.5504370
DO - 10.1109/SOPO.2010.5504370
M3 - Conference contribution
AN - SCOPUS:77954948164
SN - 9781424449644
T3 - 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
BT - 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
ER -