Optical, structural and electrical properties of tin doped indium oxide thin films prepared by spray-pyrolysis technique

Kodigala Ramaiah Subba, V. Sundara Raja, A. K. Bhatnagar, R. D. Tomlinson, R. D. Pilkington, A. E. Hill, S. J. Chang, Y. K. Su, F. S. Juang

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64 Citations (Scopus)


Tin doped indium oxide (In2O3:Sn) or indium tin oxide (ITO) thin films have been successfully deposited by the low cost spray-pyrolysis method. Low sheet resistance and high mobility films were obtained when the films were deposited at the substrate temperature of 793 K. The direct optical bandgaps for the films deposited at 793 (a) and 753 K (b) were found to he 3.46 and 3.40 eV, respectively. Similarly, the indirect handgaps for a- and b-type films were found to be 3.0 and 2.75 eV, respectively. The Burstein-Moss shift was observed in the films. The refractive index (n) and extinction coefficient (k) were found to be in the range of 2.1 to 1.1 and 0.6 to 0.01, respectively. The various scattering mechanisms such as lattice, ionized impurity, neutral impurity, grain boundary and alloy scattering due to variation of theoretical mobilities with temperature are discussed, in order to compare experimental results. In the lattice scattering mechanism, the quantum size effect phenomena were employed to estimate the energy dilation (El). The a-type films exhibited SnO2 as secondary phase whereas b-type films showed single phase In2O3:Sn with high sheet resistance. The lattice constants were found to be 10.16 and 10.09 angstroms for a- and b-type films, respectively.

Original languageEnglish
Pages (from-to)676-683
Number of pages8
JournalSemiconductor Science and Technology
Issue number7
Publication statusPublished - 2000 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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