Optical study of SiGe films grown with low temperature Si buffer

Y. H. Luo; J. Wan; J. L. Liu; K. L. Wang

doi:10.1557/proc-673-p3.11

Optical study of SiGe films grown with low temperature Si buffer

Y. H. Luo, J. Wan, J. L. Liu, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, photoluminescence and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that using proper growth conditions of the low temperature Si buffer, the Si buffer became tensily strained and gave rise to the compliant effect. High-quality SiGe films with low threading dislocation density have been obtained.

Original language	English
Pages (from-to)	P3.11.1-P3.11.6
Journal	Materials Research Society Symposium - Proceedings
Volume	673
DOIs	https://doi.org/10.1557/proc-673-p3.11
Publication status	Published - 2001
Event	Dislocations and Deformation Mechanics in Thin Films and Small Structures - San Francisco, CA, United States Duration: 2001 Apr 17 → 2001 Apr 19

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-673-p3.11

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@article{c6839562685145ba9e571c2e6ee4b7f4,

title = "Optical study of SiGe films grown with low temperature Si buffer",

abstract = "In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, photoluminescence and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that using proper growth conditions of the low temperature Si buffer, the Si buffer became tensily strained and gave rise to the compliant effect. High-quality SiGe films with low threading dislocation density have been obtained.",

author = "Luo, {Y. H.} and J. Wan and Liu, {J. L.} and Wang, {K. L.}",

note = "Funding Information: The work was supported by Semiconductor Research Corporation and UCMICRO-Conexant.; Dislocations and Deformation Mechanics in Thin Films and Small Structures ; Conference date: 17-04-2001 Through 19-04-2001",

year = "2001",

doi = "10.1557/proc-673-p3.11",

language = "English",

volume = "673",

pages = "P3.11.1--P3.11.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Optical study of SiGe films grown with low temperature Si buffer

AU - Luo, Y. H.

AU - Wan, J.

AU - Liu, J. L.

AU - Wang, K. L.

N1 - Funding Information: The work was supported by Semiconductor Research Corporation and UCMICRO-Conexant.

PY - 2001

Y1 - 2001

N2 - In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, photoluminescence and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that using proper growth conditions of the low temperature Si buffer, the Si buffer became tensily strained and gave rise to the compliant effect. High-quality SiGe films with low threading dislocation density have been obtained.

AB - In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, photoluminescence and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that using proper growth conditions of the low temperature Si buffer, the Si buffer became tensily strained and gave rise to the compliant effect. High-quality SiGe films with low threading dislocation density have been obtained.

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UR - http://www.scopus.com/inward/citedby.url?scp=0035557851&partnerID=8YFLogxK

U2 - 10.1557/proc-673-p3.11

DO - 10.1557/proc-673-p3.11

M3 - Conference article

AN - SCOPUS:0035557851

SN - 0272-9172

VL - 673

SP - P3.11.1-P3.11.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Dislocations and Deformation Mechanics in Thin Films and Small Structures

Y2 - 17 April 2001 through 19 April 2001

ER -

Optical study of SiGe films grown with low temperature Si buffer

Abstract

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