Optical study of SiGe films grown with low temperature Si buffer

Y. H. Luo, J. Wan, J. L. Liu, K. L. Wang

Research output: Contribution to journalConference articlepeer-review


In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, photoluminescence and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that using proper growth conditions of the low temperature Si buffer, the Si buffer became tensily strained and gave rise to the compliant effect. High-quality SiGe films with low threading dislocation density have been obtained.

Original languageEnglish
Pages (from-to)P3.11.1-P3.11.6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2001
EventDislocations and Deformation Mechanics in Thin Films and Small Structures - San Francisco, CA, United States
Duration: 2001 Apr 172001 Apr 19

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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