Abstract
We report the first room-temperature photoreflectance (PR) measurement for self-assemble Ge quantum dot/Si superlattice grown by chemical vapor deposition (CVD) system. The relevant critical energies of transitions are obtained through fitting the PR spectrum. They are in good agreement with the result of theoretical calculations for the wetting layer with strain and a quantum dot of disk shape.
| Original language | English |
|---|---|
| Pages (from-to) | L1045-L1047 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 44 |
| Issue number | 33-36 |
| DOIs | |
| Publication status | Published - 2005 Aug 26 |
All Science Journal Classification (ASJC) codes
- General Engineering
- General Physics and Astronomy
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