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Optical transitions in a self-assembled Ge quantum Dot/Si superlattice measured by photoreflectance spectroscopy

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Abstract

We report the first room-temperature photoreflectance (PR) measurement for self-assemble Ge quantum dot/Si superlattice grown by chemical vapor deposition (CVD) system. The relevant critical energies of transitions are obtained through fitting the PR spectrum. They are in good agreement with the result of theoretical calculations for the wetting layer with strain and a quantum dot of disk shape.

Original languageEnglish
Pages (from-to)L1045-L1047
JournalJapanese Journal of Applied Physics
Volume44
Issue number33-36
DOIs
Publication statusPublished - 2005 Aug 26

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy

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