The multiquantum barrier buffer layer in GaAs MESFET configuration exhibits great reduction on the optically induced sidegating current. The electrical and optically induced sidegating current suppressions of enhanced potential barrier height achieved with multiquantum barrier buffer layer are clearly demonstrated. Index Terms- Metal-semiconductor field effect transistors, multiple quantum barrier, semiconductor device.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering