Optically induced sidegating current isolation of GaAs MESFET by multiquantum barrier

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4 Citations (Scopus)

Abstract

The multiquantum barrier buffer layer in GaAs MESFET configuration exhibits great reduction on the optically induced sidegating current. The electrical and optically induced sidegating current suppressions of enhanced potential barrier height achieved with multiquantum barrier buffer layer are clearly demonstrated. Index Terms- Metal-semiconductor field effect transistors, multiple quantum barrier, semiconductor device.

Original languageEnglish
Pages (from-to)2083-2085
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume45
Issue number9
DOIs
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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