Optically transparent of n-ZnO/p-NiO heterojunction for ultraviolet photodetector application

Shu Yi Tsai, Min Hsiung Hon, Yang Ming Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


Transparent p-n heterojunction diodes consisting of n-type ZnO and p-type NiO thin films were prepared on glass substrates by r.f. magnetron sputtering. The structural and optical properties of the n-ZnO/p-NiO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall measurement, and I-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 2) orientation. The optical transmittances of ZnO and NiO films are 87% and 80%, respectively. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest of leakage current is 7.73×10-8 A/cm2 for n-ZnO/p-NiO heterojunction diode. Upon UV irradiation, it was found that the detector current was increased by more than one order of magnitude. It was also found that the corresponding time constant for turn-on transient was τon = 27.9 ms while that for turn-off transient was τoff= 62.8 ms.

Original languageEnglish
Title of host publicationFunctional and Electronic Materials
PublisherTrans Tech Publications Ltd
Number of pages5
ISBN (Print)9783037851692
Publication statusPublished - 2011

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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