Optimal design of triple-gate devices for high-performance and low-power applications

Meng Hsueh Chiang, Jeng Nan Lin, Keunwoo Kim, Ching Te Chuang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Pragmatic design of triple-gate (TG) devices is presented by considering corner effects, short-channel effects, and channel-doping profiles. A novel TG MOSFET structure with a polysilicon gate process is proposed using asymmetrical n+}/p+ polysilicon gates. CMOS-compatible VT's for high-performance circuit applications can be achieved for both nFET and pFET. The superior subthreshold characteristics and device performance are analyzed and validated by 3-D numerical simulations. Comparisons of device characteristics with a midgap metal gate are presented.

Original languageEnglish
Pages (from-to)2423-2428
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number9
Publication statusPublished - 2008 Aug 12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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