Optimal device design of FinFETs on a bulk substrate

Yi Bo Liao, Wei-Chou Hsu, Meng-Hsueh Chiang, Hsun Li, Chia Long Lin, Yu Shen Lai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

An optimal device design methodology for bulk FinFETs is proposed. A feasible yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin isolation oxide and doped substrate.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011 Sep 26
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 212011 Jun 24

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11-06-2111-06-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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