Optimal device design of FinFETs on a bulk substrate

Yi Bo Liao; Wei Chou Hsu; Meng Hsueh Chiang; Hsun Li; Chia Long Lin; Yu Shen Lai

doi:10.1109/INEC.2011.5991787

Optimal device design of FinFETs on a bulk substrate

Yi Bo Liao, Wei Chou Hsu, Meng Hsueh Chiang, Hsun Li, Chia Long Lin, Yu Shen Lai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

An optimal device design methodology for bulk FinFETs is proposed. A feasible yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin isolation oxide and doped substrate.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991787
Publication status	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	11-06-21 → 11-06-24

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/INEC.2011.5991787

Cite this

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title = "Optimal device design of FinFETs on a bulk substrate",

abstract = "An optimal device design methodology for bulk FinFETs is proposed. A feasible yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin isolation oxide and doped substrate.",

author = "Liao, {Yi Bo} and Hsu, {Wei Chou} and Chiang, {Meng Hsueh} and Hsun Li and Lin, {Chia Long} and Lai, {Yu Shen}",

year = "2011",

doi = "10.1109/INEC.2011.5991787",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

Liao, YB, Hsu, WC , Chiang, MH, Li, H, Lin, CL & Lai, YS 2011, Optimal device design of FinFETs on a bulk substrate. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991787, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 11-06-21. https://doi.org/10.1109/INEC.2011.5991787

TY - GEN

T1 - Optimal device design of FinFETs on a bulk substrate

AU - Liao, Yi Bo

AU - Hsu, Wei Chou

AU - Chiang, Meng Hsueh

AU - Li, Hsun

AU - Lin, Chia Long

AU - Lai, Yu Shen

PY - 2011

Y1 - 2011

N2 - An optimal device design methodology for bulk FinFETs is proposed. A feasible yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin isolation oxide and doped substrate.

AB - An optimal device design methodology for bulk FinFETs is proposed. A feasible yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin isolation oxide and doped substrate.

UR - http://www.scopus.com/inward/record.url?scp=80052971864&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052971864&partnerID=8YFLogxK

U2 - 10.1109/INEC.2011.5991787

DO - 10.1109/INEC.2011.5991787

M3 - Conference contribution

AN - SCOPUS:80052971864

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Optimal device design of FinFETs on a bulk substrate

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