Optimization of Parameters for TVS breakdown voltage

Design and Fabrication

Tzu Lang Shih, Wen-Shi Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
EditorsMulpuri V. Rao
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479952120
DOIs
Publication statusPublished - 2014 Oct 29
Event20th International Conference on Ion Implantation Technology, IIT 2014 - Portland, United States
Duration: 2014 Jun 302014 Jul 4

Publication series

NameProceedings of the International Conference on Ion Implantation Technology

Other

Other20th International Conference on Ion Implantation Technology, IIT 2014
CountryUnited States
CityPortland
Period14-06-3014-07-04

Fingerprint

suppressors
Electric breakdown
Zener diodes
electrical faults
Fabrication
avalanche diodes
fabrication
optimization
Diodes
Electric potential
electric potential
Capacitance
capacitance
diodes
Transistors
transistors
simulation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Shih, T. L., & Lee, W-S. (2014). Optimization of Parameters for TVS breakdown voltage: Design and Fabrication. In M. V. Rao (Ed.), Proceedings of the International Conference on Ion Implantation Technology [6940007] (Proceedings of the International Conference on Ion Implantation Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2014.6940007
Shih, Tzu Lang ; Lee, Wen-Shi. / Optimization of Parameters for TVS breakdown voltage : Design and Fabrication. Proceedings of the International Conference on Ion Implantation Technology. editor / Mulpuri V. Rao. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings of the International Conference on Ion Implantation Technology).
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Shih, TL & Lee, W-S 2014, Optimization of Parameters for TVS breakdown voltage: Design and Fabrication. in MV Rao (ed.), Proceedings of the International Conference on Ion Implantation Technology., 6940007, Proceedings of the International Conference on Ion Implantation Technology, Institute of Electrical and Electronics Engineers Inc., 20th International Conference on Ion Implantation Technology, IIT 2014, Portland, United States, 14-06-30. https://doi.org/10.1109/IIT.2014.6940007

Optimization of Parameters for TVS breakdown voltage : Design and Fabrication. / Shih, Tzu Lang; Lee, Wen-Shi.

Proceedings of the International Conference on Ion Implantation Technology. ed. / Mulpuri V. Rao. Institute of Electrical and Electronics Engineers Inc., 2014. 6940007 (Proceedings of the International Conference on Ion Implantation Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.

AB - The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.

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Shih TL, Lee W-S. Optimization of Parameters for TVS breakdown voltage: Design and Fabrication. In Rao MV, editor, Proceedings of the International Conference on Ion Implantation Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6940007. (Proceedings of the International Conference on Ion Implantation Technology). https://doi.org/10.1109/IIT.2014.6940007