@inproceedings{4bc7a79132314c41b6d9013c6a143309,
title = "Optimization of Parameters for TVS breakdown voltage: Design and Fabrication",
abstract = "The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.",
author = "Shih, {Tzu Lang} and Lee, {Wen Hsi}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 20th International Conference on Ion Implantation Technology, IIT 2014 ; Conference date: 30-06-2014 Through 04-07-2014",
year = "2014",
month = oct,
day = "29",
doi = "10.1109/IIT.2014.6940007",
language = "English",
series = "Proceedings of the International Conference on Ion Implantation Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Rao, {Mulpuri V.}",
booktitle = "Proceedings of the International Conference on Ion Implantation Technology",
address = "United States",
}