Optimization of post-N2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application

Yi Lung Cheng, Ying Lang Wang, Jin Kun Lan, Sze Au Wu, Shih Chieh Chang, Kuang Yao Lo, Ming Shiann Feng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The optimum conditions of N2 treatment and undoped silicon glass (USG) capping layers on the metal delamination were analyzed. More active fluorine species diffusion from the FSG films to the USG surface was observed on higher bias power and longer process time of N2 treatment. It was observed metal delamination ocurred on diffusion of unbounded fluorine species to the USG surface which reacted with the subsequent Ti/TiN layer. It was found with the use of plasma enhanced N2 treatment and USG capping with lower initial deposition, the stability of the FSG films was improved which resulted in a robust structure without metal peeling.

Original languageEnglish
Pages (from-to)1792-1796
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
Publication statusPublished - 2004 Jul 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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