The optimum conditions of N2 treatment and undoped silicon glass (USG) capping layers on the metal delamination were analyzed. More active fluorine species diffusion from the FSG films to the USG surface was observed on higher bias power and longer process time of N2 treatment. It was observed metal delamination ocurred on diffusion of unbounded fluorine species to the USG surface which reacted with the subsequent Ti/TiN layer. It was found with the use of plasma enhanced N2 treatment and USG capping with lower initial deposition, the stability of the FSG films was improved which resulted in a robust structure without metal peeling.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 Jul 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering