Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

Yu Chung Lin; Ikai Lo; Cheng Da Tsai; Ying Chieh Wang; Hui Chun Huang; Chu An Li; Mitch M.C. Chou; Ting Chang Chang

doi:10.3390/nano13131922

Optimization of Ternary In_xGa_1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

Yu Chung Lin
, Ikai Lo
, Cheng Da Tsai
, Ying Chieh Wang
, Hui Chun Huang
, Chu An Li
, Mitch M.C. Chou
, Ting Chang Chang

Program on Key Materials

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Red, green, and blue light In_xGa_1−xN multiple quantum wells have been grown on GaN/γ-LiAlO₂ microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for In_xGa_1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (In_xGa_1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful In_xGa_1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.

Original language	English
Article number	1922
Journal	Nanomaterials
Volume	13
Issue number	13
DOIs	https://doi.org/10.3390/nano13131922
Publication status	Published - 2023 Jul

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science

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10.3390/nano13131922

Cite this

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title = "Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs",

abstract = "Red, green, and blue light InxGa1−xN multiple quantum wells have been grown on GaN/γ-LiAlO2 microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InxGa1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (InxGa1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful InxGa1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.",

author = "Lin, \{Yu Chung\} and Ikai Lo and Tsai, \{Cheng Da\} and Wang, \{Ying Chieh\} and Huang, \{Hui Chun\} and Li, \{Chu An\} and Chou, \{Mitch M.C.\} and Chang, \{Ting Chang\}",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = jul,

doi = "10.3390/nano13131922",

language = "English",

volume = "13",

journal = "Nanomaterials",

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T1 - Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

AU - Lin, Yu Chung

AU - Lo, Ikai

AU - Tsai, Cheng Da

AU - Wang, Ying Chieh

AU - Huang, Hui Chun

AU - Li, Chu An

AU - Chou, Mitch M.C.

AU - Chang, Ting Chang

PY - 2023/7

Y1 - 2023/7

N2 - Red, green, and blue light InxGa1−xN multiple quantum wells have been grown on GaN/γ-LiAlO2 microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InxGa1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (InxGa1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful InxGa1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.

AB - Red, green, and blue light InxGa1−xN multiple quantum wells have been grown on GaN/γ-LiAlO2 microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InxGa1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (InxGa1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful InxGa1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.

UR - https://www.scopus.com/pages/publications/85164703190

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DO - 10.3390/nano13131922

M3 - Article

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SN - 2079-4991

VL - 13

JO - Nanomaterials

JF - Nanomaterials

IS - 13

M1 - 1922

ER -

Optimization of Ternary In_xGa_1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

Abstract

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