Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

Y. K. Su, W. C. Chen, C. T. Wan, H. C. Yu, R. W. Chuang, M. C. Tsai, K. Y. Cheng, C. Hu, Seth Tsau

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10 Citations (Scopus)


In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In0.39Ga0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm2. The fitted characteristic temperature (T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In0.42Ga0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.

Original languageEnglish
Pages (from-to)3615-3620
Number of pages6
JournalJournal of Crystal Growth
Issue number15
Publication statusPublished - 2008 Jul 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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