Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

Y. K. Su; W. C. Chen; C. T. Wan; H. C. Yu; R. W. Chuang; M. C. Tsai; K. Y. Cheng; C. Hu; Seth Tsau

doi:10.1016/j.jcrysgro.2008.04.041

Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

Y. K. Su, W. C. Chen, C. T. Wan, H. C. Yu, R. W. Chuang, M. C. Tsai, K. Y. Cheng, C. Hu, Seth Tsau

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In_0.39Ga_0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm². To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm². The fitted characteristic temperature (T₀) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In_0.42Ga_0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.

Original language	English
Pages (from-to)	3615-3620
Number of pages	6
Journal	Journal of Crystal Growth
Volume	310
Issue number	15
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.04.041
Publication status	Published - 2008 Jul 15

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2008.04.041

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title = "Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE",

abstract = "In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In0.39Ga0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm2. The fitted characteristic temperature (T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In0.42Ga0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.",

author = "Su, {Y. K.} and Chen, {W. C.} and Wan, {C. T.} and Yu, {H. C.} and Chuang, {R. W.} and Tsai, {M. C.} and Cheng, {K. Y.} and C. Hu and Seth Tsau",

year = "2008",

month = jul,

day = "15",

doi = "10.1016/j.jcrysgro.2008.04.041",

language = "English",

volume = "310",

pages = "3615--3620",

journal = "Journal of Crystal Growth",

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T1 - Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

AU - Su, Y. K.

AU - Chen, W. C.

AU - Wan, C. T.

AU - Yu, H. C.

AU - Chuang, R. W.

AU - Tsai, M. C.

AU - Cheng, K. Y.

AU - Hu, C.

AU - Tsau, Seth

PY - 2008/7/15

Y1 - 2008/7/15

N2 - In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In0.39Ga0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm2. The fitted characteristic temperature (T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In0.42Ga0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.

AB - In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In0.39Ga0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm2. The fitted characteristic temperature (T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In0.42Ga0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.

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DO - 10.1016/j.jcrysgro.2008.04.041

M3 - Article

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SN - 0022-0248

VL - 310

SP - 3615

EP - 3620

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 15

ER -

Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

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