TY - JOUR
T1 - Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE
AU - Su, Y. K.
AU - Chen, W. C.
AU - Wan, C. T.
AU - Yu, H. C.
AU - Chuang, R. W.
AU - Tsai, M. C.
AU - Cheng, K. Y.
AU - Hu, C.
AU - Tsau, Seth
PY - 2008/7/15
Y1 - 2008/7/15
N2 - In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In0.39Ga0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm2. The fitted characteristic temperature (T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In0.42Ga0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.
AB - In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In0.39Ga0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm2. The fitted characteristic temperature (T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In0.42Ga0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.
UR - https://www.scopus.com/pages/publications/46749097127
UR - https://www.scopus.com/pages/publications/46749097127#tab=citedBy
U2 - 10.1016/j.jcrysgro.2008.04.041
DO - 10.1016/j.jcrysgro.2008.04.041
M3 - Article
AN - SCOPUS:46749097127
SN - 0022-0248
VL - 310
SP - 3615
EP - 3620
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 15
ER -