Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si_0.8Ge_0.2by Controlling CF₄Atmosphere with Ar and O₂Additives in ICP

Engineering & Materials Science

• Inductively coupled plasma 100%
• Argon 75%
• Etching 72%
• Silicon 42%
• Plasmas 24%
• Surface roughness 22%
• Ultrahigh vacuum 21%
• Chemical vapor deposition 15%
• Gas mixtures 15%
• Scanning electron microscopy 10%
• Carbon 10%
• Flow rate 10%
• Substrates 9%
• Gases 7%

Physics & Astronomy

• germanium 59%
• argon 52%
• etching 50%
• profiles 36%
• silicon 28%
• surface roughness 22%
• carbon tetrafluoride 22%
• plasma chemistry 18%
• argon plasma 15%
• ultrahigh vacuum 13%
• selectivity 12%
• gas mixtures 12%
• flow velocity 10%
• vapor deposition 10%
• atomic force microscopy 10%
• atmospheres 9%
• scanning electron microscopy 8%
• oxygen 8%
• gases 6%

Chemical Compounds

• Inductively Coupled Plasma 66%
• Etching 60%
• Surface Roughness 26%
• Plasma 16%
• Gas 14%
• Chemical Vapour Deposition 12%
• Vacuum 10%
• Flow Kinetics 10%
• Chemistry 7%
• Modification 7%
• Purity 6%
• Dioxygen 6%
• Carbon Atom 6%
• Reduction 6%
• Mixture 5%