Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films

K. J. Chen, F. Y. Hung, S. J. Chang, S. J. Young

Research output: Contribution to journalArticlepeer-review

162 Citations (Scopus)

Abstract

The ZnO thin films were prepared on the quartz substrate by the sol-gel method and the UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact 30 nm IrO2 electrodes. The ZnO thin films were crystallized at various temperatures (600-700 °C) for 1 h in a pure oxygen atmosphere, then were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystallized thin film structures. From photoluminescence (PL) and I-V measurements, the 650 °C thin film not only possessed better crystallization but also had nanowire structures that revealed excellent potential as a UV photodetector.

Original languageEnglish
Pages (from-to)674-677
Number of pages4
JournalJournal of Alloys and Compounds
Volume479
Issue number1-2
DOIs
Publication statusPublished - 2009 Jun 24

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films'. Together they form a unique fingerprint.

Cite this