Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films

K. J. Chen; F. Y. Hung; S. J. Chang; S. J. Young

doi:10.1016/j.jallcom.2009.01.026

Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films

K. J. Chen, F. Y. Hung, S. J. Chang, S. J. Young

Research output: Contribution to journal › Article › peer-review

195 Citations (Scopus)

Abstract

The ZnO thin films were prepared on the quartz substrate by the sol-gel method and the UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact 30 nm IrO₂ electrodes. The ZnO thin films were crystallized at various temperatures (600-700 °C) for 1 h in a pure oxygen atmosphere, then were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystallized thin film structures. From photoluminescence (PL) and I-V measurements, the 650 °C thin film not only possessed better crystallization but also had nanowire structures that revealed excellent potential as a UV photodetector.

Original language	English
Pages (from-to)	674-677
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	479
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2009.01.026
Publication status	Published - 2009 Jun 24

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2009.01.026

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title = "Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films",

abstract = "The ZnO thin films were prepared on the quartz substrate by the sol-gel method and the UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact 30 nm IrO2 electrodes. The ZnO thin films were crystallized at various temperatures (600-700 °C) for 1 h in a pure oxygen atmosphere, then were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystallized thin film structures. From photoluminescence (PL) and I-V measurements, the 650 °C thin film not only possessed better crystallization but also had nanowire structures that revealed excellent potential as a UV photodetector.",

author = "Chen, {K. J.} and Hung, {F. Y.} and Chang, {S. J.} and Young, {S. J.}",

note = "Funding Information: The authors are grateful to National Cheng Kung University, the Center for Micro/Nano Science and Technology (NCKU Project of D97-2700) and NSC 97-2221-E-006-018/NSC 97-2622-E-006-009-CC3 for the financial support. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

month = jun,

day = "24",

doi = "10.1016/j.jallcom.2009.01.026",

language = "English",

volume = "479",

pages = "674--677",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

number = "1-2",

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T1 - Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films

AU - Chen, K. J.

AU - Hung, F. Y.

AU - Chang, S. J.

AU - Young, S. J.

N1 - Funding Information: The authors are grateful to National Cheng Kung University, the Center for Micro/Nano Science and Technology (NCKU Project of D97-2700) and NSC 97-2221-E-006-018/NSC 97-2622-E-006-009-CC3 for the financial support. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009/6/24

Y1 - 2009/6/24

N2 - The ZnO thin films were prepared on the quartz substrate by the sol-gel method and the UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact 30 nm IrO2 electrodes. The ZnO thin films were crystallized at various temperatures (600-700 °C) for 1 h in a pure oxygen atmosphere, then were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystallized thin film structures. From photoluminescence (PL) and I-V measurements, the 650 °C thin film not only possessed better crystallization but also had nanowire structures that revealed excellent potential as a UV photodetector.

AB - The ZnO thin films were prepared on the quartz substrate by the sol-gel method and the UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact 30 nm IrO2 electrodes. The ZnO thin films were crystallized at various temperatures (600-700 °C) for 1 h in a pure oxygen atmosphere, then were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystallized thin film structures. From photoluminescence (PL) and I-V measurements, the 650 °C thin film not only possessed better crystallization but also had nanowire structures that revealed excellent potential as a UV photodetector.

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DO - 10.1016/j.jallcom.2009.01.026

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SN - 0925-8388

VL - 479

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EP - 677

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films

Abstract

All Science Journal Classification (ASJC) codes

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