Optoelectronic characteristics of UV photodetector based on ZnO nanopillar thin films prepared by sol-gel method

K. J. Chen, F. Y. Hung, S. J. Chang, S. J. Young

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

ZnO thin films were prepared on a quartz substrate by sol-gel method and a UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact with 30 nm IrO2 electrodes. The ZnO thin films were crystallized at various crystallized temperature (600-700°C) for 1 hour in pure oxygen atmosphere, and were then analyzed by X-ray diffraction (XRD) and the scanning electron microscopy (SEM) to investigate the thin film crystallized structures, From photoluminescence (PL) and I-V measurement, the 650 C thin film not only possessed a better crystallization but also had nanopillar structures that revealed an excellent characteristic of UV photodetector.

Original languageEnglish
Pages (from-to)922-925
Number of pages4
JournalMaterials Transactions
Volume50
Issue number4
DOIs
Publication statusPublished - 2009 Apr

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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