Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistors

Ebinazar B. Namdas, Ben B.Y. Hsu, Jonathan D. Yuen, Ifor D.W. Samuel, Alan J. Heeger

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO2 and SiNx dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiNx gate dielectric and can reach a brightness as high as 4500 cd/m2.

Original languageEnglish
Pages (from-to)2353-2356
Number of pages4
JournalAdvanced Materials
Volume23
Issue number20
DOIs
Publication statusPublished - 2011 May 24

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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