Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistors

Ebinazar B. Namdas; Ben B.Y. Hsu; Jonathan D. Yuen; Ifor D.W. Samuel; Alan J. Heeger

doi:10.1002/adma.201004102

Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistors

Ebinazar B. Namdas, Ben B.Y. Hsu, Jonathan D. Yuen, Ifor D.W. Samuel, Alan J. Heeger

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO₂ and SiN_x dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiN_x gate dielectric and can reach a brightness as high as 4500 cd/m².

Original language	English
Pages (from-to)	2353-2356
Number of pages	4
Journal	Advanced Materials
Volume	23
Issue number	20
DOIs	https://doi.org/10.1002/adma.201004102
Publication status	Published - 2011 May 24

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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abstract = "The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO2 and SiNx dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiNx gate dielectric and can reach a brightness as high as 4500 cd/m2.",

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AU - Hsu, Ben B.Y.

AU - Yuen, Jonathan D.

AU - Samuel, Ifor D.W.

AU - Heeger, Alan J.

PY - 2011/5/24

Y1 - 2011/5/24

N2 - The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO2 and SiNx dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiNx gate dielectric and can reach a brightness as high as 4500 cd/m2.

AB - The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO2 and SiNx dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiNx gate dielectric and can reach a brightness as high as 4500 cd/m2.

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Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistors

Abstract

All Science Journal Classification (ASJC) codes

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