Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se2

Lorelle M. Mansfield; Darius Kuciauskas; Patricia Dippo; Jian V. Li; Karen Bowers; Bobby To; Clay Dehart; Kannan Ramanathan

doi:10.1109/JPHOTOV.2015.2470082

Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se₂

Lorelle M. Mansfield, Darius Kuciauskas, Patricia Dippo, Jian V. Li, Karen Bowers, Bobby To, Clay Dehart, Kannan Ramanathan

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this study, we incorporated Sb into the precursor that was subsequently converted to Cu(In,Ga)Se₂ (CIGS) by a selenization process. We observed enhanced grain size and improved device performance compared with similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to explore the changes in native defect compensation and evaluate the origin of a lower energy PL peak that is not typically seen in CIGS.

Original language	English
Article number	7234835
Pages (from-to)	1769-1774
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2015.2470082
Publication status	Published - 2015 Sep 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JPHOTOV.2015.2470082

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title = "Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se2",

abstract = "In this study, we incorporated Sb into the precursor that was subsequently converted to Cu(In,Ga)Se2 (CIGS) by a selenization process. We observed enhanced grain size and improved device performance compared with similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to explore the changes in native defect compensation and evaluate the origin of a lower energy PL peak that is not typically seen in CIGS.",

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AU - Mansfield, Lorelle M.

AU - Kuciauskas, Darius

AU - Dippo, Patricia

AU - Li, Jian V.

AU - Bowers, Karen

AU - To, Bobby

AU - Dehart, Clay

AU - Ramanathan, Kannan

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AB - In this study, we incorporated Sb into the precursor that was subsequently converted to Cu(In,Ga)Se2 (CIGS) by a selenization process. We observed enhanced grain size and improved device performance compared with similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to explore the changes in native defect compensation and evaluate the origin of a lower energy PL peak that is not typically seen in CIGS.

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Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se₂

Abstract

All Science Journal Classification (ASJC) codes

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