Abstract
In this study, we incorporated Sb into the precursor that was subsequently converted to Cu(In,Ga)Se2 (CIGS) by a selenization process. We observed enhanced grain size and improved device performance compared with similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to explore the changes in native defect compensation and evaluate the origin of a lower energy PL peak that is not typically seen in CIGS.
Original language | English |
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Article number | 7234835 |
Pages (from-to) | 1769-1774 |
Number of pages | 6 |
Journal | IEEE Journal of Photovoltaics |
Volume | 5 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2015 Sep 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering