In this work, Zn2GeO4 nanowires (NWs) were successfully synthesized on Si(100) substrates through carbon thermal reduction and a vapor-liquid-solid method. The NWs were of around 100 nm diameter and high aspect ratio (AR > 150). High-resolution transmission electron microscopy studies indicate that the NWs are single-crystalline with  growth direction. Moreover, the atomic resolution high-angle annular dark-field and bright-field images of scanning transmission electron microscopy have distinguished the different elements. They also further identified the structure of Zn2GeO4 and located the positions of the elements. Additionally, we have fabricated devices and measured the electrical properties of a single NW. It is remarkable that individual Zn2GeO4 NW devices exhibited excellent optoelectronic properties with fast switching speed under 254 nm UV illuminations. Furthermore, with short wavelength UV illumination, as we soaked Zn2GeO4 NWs in methyl orange solution, the methyl orange was degraded. Therefore, Zn2GeO 4 NWs have potential applications in UV photodetectors and degradation of organic pollutants.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films