Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition

Yu Min Shen; Chih Huang Pan; Sheng Chang Wang; Jow Lay Huang

doi:10.1016/j.tsf.2011.09.066

Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition

Yu Min Shen, Chih Huang Pan, Sheng Chang Wang, Jow Lay Huang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO₄ and H₂O₂ solutions at a potential of - 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110-140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.

Original language	English
Pages (from-to)	1532-1540
Number of pages	9
Journal	Thin Solid Films
Volume	520
Issue number	5
DOIs	https://doi.org/10.1016/j.tsf.2011.09.066
Publication status	Published - 2011 Dec 30

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2011.09.066

Cite this

@article{3b4eb5c448514f65ad63a181d43065dc,

title = "Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition",

abstract = "An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO4 and H2O2 solutions at a potential of - 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110-140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.",

author = "Shen, {Yu Min} and Pan, {Chih Huang} and Wang, {Sheng Chang} and Huang, {Jow Lay}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under grant NSC 98-2221-E-006-008 .",

year = "2011",

month = dec,

day = "30",

doi = "10.1016/j.tsf.2011.09.066",

language = "English",

volume = "520",

pages = "1532--1540",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition

AU - Shen, Yu Min

AU - Pan, Chih Huang

AU - Wang, Sheng Chang

AU - Huang, Jow Lay

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under grant NSC 98-2221-E-006-008 .

PY - 2011/12/30

Y1 - 2011/12/30

N2 - An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO4 and H2O2 solutions at a potential of - 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110-140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.

AB - An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO4 and H2O2 solutions at a potential of - 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110-140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.

UR - http://www.scopus.com/inward/record.url?scp=82755194867&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82755194867&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.09.066

DO - 10.1016/j.tsf.2011.09.066

M3 - Article

AN - SCOPUS:82755194867

SN - 0040-6090

VL - 520

SP - 1532

EP - 1540

JO - Thin Solid Films

JF - Thin Solid Films

IS - 5

ER -

Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this