Organic complementary inverters with polyimide films as the surface modification of dielectrics

Wei Yang Chou, Bo Liang Yeh, Horng Long Cheng, Bo Yuan Sun, Yao Chien Cheng, Yi Sheng Lin, Shyh Jiun Liu, Fu Ching Tang, Chung Chih Chang

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16 Citations (Scopus)


The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p-type pentacene-based transistors and n-type N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H17)-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 μs at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed.

Original languageEnglish
Pages (from-to)1001-1005
Number of pages5
JournalOrganic Electronics
Issue number5
Publication statusPublished - 2009 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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