Abstract
The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p-type pentacene-based transistors and n-type N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H17)-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 μs at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1001-1005 |
| Number of pages | 5 |
| Journal | Organic Electronics |
| Volume | 10 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2009 Jan 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
}
Organic complementary inverters with polyimide films as the surface modification of dielectrics. / Chou, Wei-Yang; Yeh, Bo Liang; Cheng, Horng-Long; Sun, Bo Yuan; Cheng, Yao Chien; Lin, Yi Sheng; Liu, Shyh Jiun; Tang, Fu-Ching; Chang, Chung Chih.
In: Organic Electronics, Vol. 10, No. 5, 01.01.2009, p. 1001-1005.Research output: Contribution to journal › Article
TY - JOUR
T1 - Organic complementary inverters with polyimide films as the surface modification of dielectrics
AU - Chou, Wei-Yang
AU - Yeh, Bo Liang
AU - Cheng, Horng-Long
AU - Sun, Bo Yuan
AU - Cheng, Yao Chien
AU - Lin, Yi Sheng
AU - Liu, Shyh Jiun
AU - Tang, Fu-Ching
AU - Chang, Chung Chih
PY - 2009/1/1
Y1 - 2009/1/1
N2 - The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p-type pentacene-based transistors and n-type N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H17)-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 μs at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed.
AB - The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p-type pentacene-based transistors and n-type N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H17)-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 μs at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed.
UR - http://www.scopus.com/inward/record.url?scp=67649202231&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67649202231&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2009.03.017
DO - 10.1016/j.orgel.2009.03.017
M3 - Article
AN - SCOPUS:67649202231
VL - 10
SP - 1001
EP - 1005
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 5
ER -