Organic complementary inverters with polyimide films as the surface modification of dielectrics

Wei-Yang Chou, Bo Liang Yeh, Horng-Long Cheng, Bo Yuan Sun, Yao Chien Cheng, Yi Sheng Lin, Shyh Jiun Liu, Fu-Ching Tang, Chung Chih Chang

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16 Citations (Scopus)


The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p-type pentacene-based transistors and n-type N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H17)-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 μs at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed.

Original languageEnglish
Pages (from-to)1001-1005
Number of pages5
JournalOrganic Electronics
Issue number5
Publication statusPublished - 2009 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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