Organic complementary inverters with polyimide films as the surface modification of dielectrics

Wei-Yang Chou; Bo Liang Yeh; Horng-Long Cheng; Bo Yuan Sun; Yao Chien Cheng; Yi Sheng Lin; Shyh Jiun Liu; Fu-Ching Tang; Chung Chih Chang

doi:10.1016/j.orgel.2009.03.017

Organic complementary inverters with polyimide films as the surface modification of dielectrics

Wei-Yang Chou, Bo Liang Yeh, Horng-Long Cheng, Bo Yuan Sun, Yao Chien Cheng, Yi Sheng Lin, Shyh Jiun Liu, Fu-Ching Tang, Chung Chih Chang

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p-type pentacene-based transistors and n-type N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C₈H₁₇)-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 μs at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed.

Original language	English
Pages (from-to)	1001-1005
Number of pages	5
Journal	Organic Electronics
Volume	10
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2009.03.017
Publication status	Published - 2009 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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@article{b90267eb24894ec9aef25ca7ff51ade2,

title = "Organic complementary inverters with polyimide films as the surface modification of dielectrics",

abstract = "The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p-type pentacene-based transistors and n-type N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H17)-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 μs at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed.",

author = "Wei-Yang Chou and Yeh, {Bo Liang} and Horng-Long Cheng and Sun, {Bo Yuan} and Cheng, {Yao Chien} and Lin, {Yi Sheng} and Liu, {Shyh Jiun} and Fu-Ching Tang and Chang, {Chung Chih}",

year = "2009",

month = jan,

day = "1",

doi = "10.1016/j.orgel.2009.03.017",

language = "English",

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journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

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Organic complementary inverters with polyimide films as the surface modification of dielectrics. / Chou, Wei-Yang; Yeh, Bo Liang; Cheng, Horng-Long; Sun, Bo Yuan; Cheng, Yao Chien; Lin, Yi Sheng; Liu, Shyh Jiun; Tang, Fu-Ching; Chang, Chung Chih.

In: Organic Electronics, Vol. 10, No. 5, 01.01.2009, p. 1001-1005.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

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AU - Chou, Wei-Yang

AU - Yeh, Bo Liang

AU - Cheng, Horng-Long

AU - Sun, Bo Yuan

AU - Cheng, Yao Chien

AU - Lin, Yi Sheng

AU - Liu, Shyh Jiun

AU - Tang, Fu-Ching

AU - Chang, Chung Chih

PY - 2009/1/1

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AB - The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p-type pentacene-based transistors and n-type N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H17)-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 μs at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed.

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