Organic nonvolatile memory based on low voltage organic thin film transistors with polymer gate electrets

Bo Liang Yeh, Yu Hao Chen, Liang Yun Chiu, Jr Wei Lin, Wei Yu Chen, Jen Sue Chen, Tzu Hsiu Chou, Wei Yang Chou, Fu Ching Tang, Horng Long Cheng

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We demonstrate a simple and an inexpensive approach for the low-temperature fabrication (<200°C) of low-voltage-operated (<20 V), organic, pentacene-based, nonvolatile memory devices with a high- k hafnium dioxide (Hf O2) main dielectric layer and a polymer electret layer. Two kinds of polymer insulators were used as the electret layer, i.e., a poly(vinylalcohol) (PVA) with strong polar groups and an amorphous poly(methyl methacrylate) (PMMA). We studied the memory characteristics of the corresponding devices, including writing and erasing process, long-term retention, and multiple continuous writing/erasing cycles' endurance testing. The memory windows in devices with PVA can be attributed to the dominant short-lifetime shallow traps located at the PVA/pentacene interface and in the pentacene film, whereas those in devices with PMMA are mainly due to the long-lifetime deep traps located in the PMMA layer. The possible sources of shallow-type and deep-type traps in the memory devices were discussed. Accordingly, the devices with the PMMA layer show superior memory characteristics, including a stable memory window of approximately 2.5 V after 20 V 1 s pulse, retaining 80% of memory windows after 103 s and a good endurance properties.

Original languageEnglish
Pages (from-to)H277-H280
JournalJournal of the Electrochemical Society
Issue number3
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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