TY - JOUR
T1 - Orientation dependence of phase memory relaxation in the V(IV) ion at high frequencies
AU - Jackson, Cassidy E.
AU - Lin, Chun Yi
AU - van Tol, Johan
AU - Zadrozny, Joseph M.
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2020/1
Y1 - 2020/1
N2 - Understanding how magnetic relaxation depends on molecular orientation is a fundamental parameter for designing magnetic molecules for application. Herein we report the first use of pulsed high-frequency electron paramagnetic resonance spectroscopy (HFEPR, 120 and 240 GHz) to define the orientation dependence of phase memory relaxation in the S = 1/2 V(IV) complex (n-Bu3NH)2[V(C6H4O2)3]. We demonstrate a variation of 20% of the phase memory relaxation time (Tm) as a function of the orientation of the [V(C6H4O2)3]2– molecule in the applied magnetic field. Ultimately, this work underlines an important design strategy for molecule-based quantum computing architectures.
AB - Understanding how magnetic relaxation depends on molecular orientation is a fundamental parameter for designing magnetic molecules for application. Herein we report the first use of pulsed high-frequency electron paramagnetic resonance spectroscopy (HFEPR, 120 and 240 GHz) to define the orientation dependence of phase memory relaxation in the S = 1/2 V(IV) complex (n-Bu3NH)2[V(C6H4O2)3]. We demonstrate a variation of 20% of the phase memory relaxation time (Tm) as a function of the orientation of the [V(C6H4O2)3]2– molecule in the applied magnetic field. Ultimately, this work underlines an important design strategy for molecule-based quantum computing architectures.
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U2 - 10.1016/j.cplett.2019.137034
DO - 10.1016/j.cplett.2019.137034
M3 - Article
AN - SCOPUS:85076490657
SN - 0009-2614
VL - 739
JO - Chemical Physics Letters
JF - Chemical Physics Letters
M1 - 137034
ER -