Orientation dependence of valence-subband structures in GaAs-Ga 1-xAlxAs quantum-well structures

Mau-phon Houng, Yia Chung Chang, W. I. Wang

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49 Citations (Scopus)

Abstract

Valence-subband structures of GaAs-Ga1-xAlxAs quantum wells growth in the [001], [111], and [110] directions are calculated based on the bond-orbital model. The effective mass for the first subband in (111)-oriented quantum wells is found to be substantially smaller than that in (001)-oriented quantum wells for well widths narrower than 70 Å. The subband structures of (110)-oriented quantum wells display large anisotropy, with effective masses along two different in-plane directions ([001] and [11̄0]) differing by almost one order of magnitude. It is also found that the Al composition has a strong effect on the hole effective mass. Implications of our results in device applications are also discussed.

Original languageEnglish
Pages (from-to)4609-4613
Number of pages5
JournalJournal of Applied Physics
Volume64
Issue number9
DOIs
Publication statusPublished - 1988 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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