Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures

J. S. Wu, Chun Yen Chang, Chien Ping Lee, Yeong-Her Wang, F. Kai

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.

Original languageEnglish
Pages (from-to)301-303
Number of pages3
JournalIEEE Electron Device Letters
Volume10
Issue number7
DOIs
Publication statusPublished - 1989 Jan 1

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Resonant tunneling
Temperature
Electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.",
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Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures. / Wu, J. S.; Chang, Chun Yen; Lee, Chien Ping; Wang, Yeong-Her; Kai, F.

In: IEEE Electron Device Letters, Vol. 10, No. 7, 01.01.1989, p. 301-303.

Research output: Contribution to journalArticle

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AU - Kai, F.

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