Origins of efficient green light emission in phase-separated InGaN quantum wells

Yen Lin Lai; Chuan Pu Liu; Yung Hsiang Lin; Tao Hung Hsueh; Ray Ming Lin; Dong Yuan Lyu; Zhao Xiang Peng; Tai Yuan Lin

doi:10.1088/0957-4484/17/15/020

Origins of efficient green light emission in phase-separated InGaN quantum wells

Yen Lin Lai, Chuan Pu Liu, Yung Hsiang Lin, Tao Hung Hsueh, Ray Ming Lin, Dong Yuan Lyu, Zhao Xiang Peng, Tai Yuan Lin

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516nm) and the InGaN matrix (450nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission.

Original language	English
Article number	020
Pages (from-to)	3734-3739
Number of pages	6
Journal	Nanotechnology
Volume	17
Issue number	15
DOIs	https://doi.org/10.1088/0957-4484/17/15/020
Publication status	Published - 2006 Aug 14

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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@article{3b0598ae1f5a4a9eb5a7282a8777ac16,

title = "Origins of efficient green light emission in phase-separated InGaN quantum wells",

abstract = "Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516nm) and the InGaN matrix (450nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission.",

author = "Lai, {Yen Lin} and Liu, {Chuan Pu} and Lin, {Yung Hsiang} and Hsueh, {Tao Hung} and Lin, {Ray Ming} and Lyu, {Dong Yuan} and Peng, {Zhao Xiang} and Lin, {Tai Yuan}",

year = "2006",

month = aug,

day = "14",

doi = "10.1088/0957-4484/17/15/020",

language = "English",

volume = "17",

pages = "3734--3739",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "15",

}

TY - JOUR

T1 - Origins of efficient green light emission in phase-separated InGaN quantum wells

AU - Lai, Yen Lin

AU - Liu, Chuan Pu

AU - Lin, Yung Hsiang

AU - Hsueh, Tao Hung

AU - Lin, Ray Ming

AU - Lyu, Dong Yuan

AU - Peng, Zhao Xiang

AU - Lin, Tai Yuan

PY - 2006/8/14

Y1 - 2006/8/14

N2 - Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516nm) and the InGaN matrix (450nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission.

AB - Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516nm) and the InGaN matrix (450nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission.

UR - http://www.scopus.com/inward/record.url?scp=33748884587&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748884587&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/17/15/020

DO - 10.1088/0957-4484/17/15/020

M3 - Article

AN - SCOPUS:33748884587

VL - 17

SP - 3734

EP - 3739

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 15

M1 - 020

ER -

Origins of efficient green light emission in phase-separated InGaN quantum wells

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