Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots

Cheng Hsueh Lu, Yi Chang Li, Yen Hsiang Chen, Sheng Chieh Tsai, Yen Lin Lai, Yun Li Li, Chuan Pu Liu

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

InGaN/GaN-based green light-emitting diodes (LEDs) with high-density ultra-small In-rich quantum dots (QDs) embedded in InGaN multiple quantum wells via spinodal decomposition are grown by metal organic chemical vapor deposition. The density and average size of In-rich QDs increased from 1 × 10 11 cm-2 to 2 × 1012 cm-2 and decreased from 8.4 nm to 2.3 nm, respectively, when the NH3 flow rate was reduced during the growth of InGaN active layers. The associated growth mechanism of QDs is discussed. High-density ultra-small QDs with improved internal quantum efficiency due to good carrier confinement and a small number of defects are obtained. The proposed approach improves the light emission efficiency of InGaN QD-based LEDs and a 10% enhancement in light output power for packaged lamp-form LEDs is demonstrated in this work.

Original languageEnglish
Pages (from-to)250-254
Number of pages5
JournalJournal of Alloys and Compounds
Volume555
DOIs
Publication statusPublished - 2013 Apr 5

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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