Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots

Cheng Hsueh Lu; Yi Chang Li; Yen Hsiang Chen; Sheng Chieh Tsai; Yen Lin Lai; Yun Li Li; Chuan Pu Liu

doi:10.1016/j.jallcom.2012.12.069

Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots

Cheng Hsueh Lu, Yi Chang Li, Yen Hsiang Chen, Sheng Chieh Tsai, Yen Lin Lai, Yun Li Li, Chuan Pu Liu

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

InGaN/GaN-based green light-emitting diodes (LEDs) with high-density ultra-small In-rich quantum dots (QDs) embedded in InGaN multiple quantum wells via spinodal decomposition are grown by metal organic chemical vapor deposition. The density and average size of In-rich QDs increased from 1 × 10 ¹¹ cm^-2 to 2 × 10¹² cm^-2 and decreased from 8.4 nm to 2.3 nm, respectively, when the NH₃ flow rate was reduced during the growth of InGaN active layers. The associated growth mechanism of QDs is discussed. High-density ultra-small QDs with improved internal quantum efficiency due to good carrier confinement and a small number of defects are obtained. The proposed approach improves the light emission efficiency of InGaN QD-based LEDs and a 10% enhancement in light output power for packaged lamp-form LEDs is demonstrated in this work.

Original language	English
Pages (from-to)	250-254
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	555
DOIs	https://doi.org/10.1016/j.jallcom.2012.12.069
Publication status	Published - 2013 Apr 5

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2012.12.069

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@article{7af7cadb613d4d6197316674272d74b4,

title = "Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots",

abstract = "InGaN/GaN-based green light-emitting diodes (LEDs) with high-density ultra-small In-rich quantum dots (QDs) embedded in InGaN multiple quantum wells via spinodal decomposition are grown by metal organic chemical vapor deposition. The density and average size of In-rich QDs increased from 1 × 10 11 cm-2 to 2 × 1012 cm-2 and decreased from 8.4 nm to 2.3 nm, respectively, when the NH3 flow rate was reduced during the growth of InGaN active layers. The associated growth mechanism of QDs is discussed. High-density ultra-small QDs with improved internal quantum efficiency due to good carrier confinement and a small number of defects are obtained. The proposed approach improves the light emission efficiency of InGaN QD-based LEDs and a 10% enhancement in light output power for packaged lamp-form LEDs is demonstrated in this work.",

author = "Lu, {Cheng Hsueh} and Li, {Yi Chang} and Chen, {Yen Hsiang} and Tsai, {Sheng Chieh} and Lai, {Yen Lin} and Li, {Yun Li} and Liu, {Chuan Pu}",

note = "Funding Information: This work was financially supported by the National Science Council of Taiwan and Genesis Photonics Inc. (grant nos. 98-2221-E-006-079-MY3 , 99-2622-E-006-015-CC2 and 101-2622-E-006-015-CC1 ).",

year = "2013",

month = apr,

day = "5",

doi = "10.1016/j.jallcom.2012.12.069",

language = "English",

volume = "555",

pages = "250--254",

journal = "Journal of the Less-Common Metals",

issn = "0925-8388",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots

AU - Lu, Cheng Hsueh

AU - Li, Yi Chang

AU - Chen, Yen Hsiang

AU - Tsai, Sheng Chieh

AU - Lai, Yen Lin

AU - Li, Yun Li

AU - Liu, Chuan Pu

N1 - Funding Information: This work was financially supported by the National Science Council of Taiwan and Genesis Photonics Inc. (grant nos. 98-2221-E-006-079-MY3 , 99-2622-E-006-015-CC2 and 101-2622-E-006-015-CC1 ).

PY - 2013/4/5

Y1 - 2013/4/5

N2 - InGaN/GaN-based green light-emitting diodes (LEDs) with high-density ultra-small In-rich quantum dots (QDs) embedded in InGaN multiple quantum wells via spinodal decomposition are grown by metal organic chemical vapor deposition. The density and average size of In-rich QDs increased from 1 × 10 11 cm-2 to 2 × 1012 cm-2 and decreased from 8.4 nm to 2.3 nm, respectively, when the NH3 flow rate was reduced during the growth of InGaN active layers. The associated growth mechanism of QDs is discussed. High-density ultra-small QDs with improved internal quantum efficiency due to good carrier confinement and a small number of defects are obtained. The proposed approach improves the light emission efficiency of InGaN QD-based LEDs and a 10% enhancement in light output power for packaged lamp-form LEDs is demonstrated in this work.

AB - InGaN/GaN-based green light-emitting diodes (LEDs) with high-density ultra-small In-rich quantum dots (QDs) embedded in InGaN multiple quantum wells via spinodal decomposition are grown by metal organic chemical vapor deposition. The density and average size of In-rich QDs increased from 1 × 10 11 cm-2 to 2 × 1012 cm-2 and decreased from 8.4 nm to 2.3 nm, respectively, when the NH3 flow rate was reduced during the growth of InGaN active layers. The associated growth mechanism of QDs is discussed. High-density ultra-small QDs with improved internal quantum efficiency due to good carrier confinement and a small number of defects are obtained. The proposed approach improves the light emission efficiency of InGaN QD-based LEDs and a 10% enhancement in light output power for packaged lamp-form LEDs is demonstrated in this work.

UR - http://www.scopus.com/inward/record.url?scp=84873901011&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873901011&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2012.12.069

DO - 10.1016/j.jallcom.2012.12.069

M3 - Article

AN - SCOPUS:84873901011

SN - 0925-8388

VL - 555

SP - 250

EP - 254

JO - Journal of the Less-Common Metals

JF - Journal of the Less-Common Metals

ER -

Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots

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