Oxidation mechanisms in TiSi2 films on single silicon substrates

Jiann Ruey Chen, Mau Phon Houng, Shen Kan Hsiung, Yuen Chung Liu

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41 Citations (Scopus)

Abstract

Ti is deposited on single silicon wafer and then forms TiSi2 by thermal annealing in vacuum. In the steam oxidation, TiSi2 first dissociates and forms a Ti compound and SiO2. After the formation of Ti compound reaches the saturation level, the substrate Si rapidly diffuses through the TiSi2 to form SiO2, while the TiSi2 remains inert. A two-step oxidation process is thus described. The calculated activation energy of reaction is 46.2 kcal/mol, and that of diffusion is 32 kcal/mol.

Original languageEnglish
Pages (from-to)824-826
Number of pages3
JournalApplied Physics Letters
Volume37
Issue number9
DOIs
Publication statusPublished - 1980

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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