Oxidation mechanisms in TiSi2 films on single silicon substrates

Jiann Ruey Chen; Mau Phon Houng; Shen Kan Hsiung; Yuen Chung Liu

doi:10.1063/1.92094

Oxidation mechanisms in TiSi₂ films on single silicon substrates

Jiann Ruey Chen
, Mau Phon Houng
, Shen Kan Hsiung
, Yuen Chung Liu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Ti is deposited on single silicon wafer and then forms TiSi₂ by thermal annealing in vacuum. In the steam oxidation, TiSi₂ first dissociates and forms a Ti compound and SiO₂. After the formation of Ti compound reaches the saturation level, the substrate Si rapidly diffuses through the TiSi₂ to form SiO₂, while the TiSi₂ remains inert. A two-step oxidation process is thus described. The calculated activation energy of reaction is 46.2 kcal/mol, and that of diffusion is 32 kcal/mol.

Original language	English
Pages (from-to)	824-826
Number of pages	3
Journal	Applied Physics Letters
Volume	37
Issue number	9
DOIs	https://doi.org/10.1063/1.92094
Publication status	Published - 1980

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.92094

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title = "Oxidation mechanisms in TiSi2 films on single silicon substrates",

abstract = "Ti is deposited on single silicon wafer and then forms TiSi2 by thermal annealing in vacuum. In the steam oxidation, TiSi2 first dissociates and forms a Ti compound and SiO2. After the formation of Ti compound reaches the saturation level, the substrate Si rapidly diffuses through the TiSi2 to form SiO2, while the TiSi2 remains inert. A two-step oxidation process is thus described. The calculated activation energy of reaction is 46.2 kcal/mol, and that of diffusion is 32 kcal/mol.",

author = "Chen, \{Jiann Ruey\} and Houng, \{Mau Phon\} and Hsiung, \{Shen Kan\} and Liu, \{Yuen Chung\}",

year = "1980",

doi = "10.1063/1.92094",

language = "English",

volume = "37",

pages = "824--826",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Oxidation mechanisms in TiSi2 films on single silicon substrates

AU - Chen, Jiann Ruey

AU - Houng, Mau Phon

AU - Hsiung, Shen Kan

AU - Liu, Yuen Chung

PY - 1980

Y1 - 1980

N2 - Ti is deposited on single silicon wafer and then forms TiSi2 by thermal annealing in vacuum. In the steam oxidation, TiSi2 first dissociates and forms a Ti compound and SiO2. After the formation of Ti compound reaches the saturation level, the substrate Si rapidly diffuses through the TiSi2 to form SiO2, while the TiSi2 remains inert. A two-step oxidation process is thus described. The calculated activation energy of reaction is 46.2 kcal/mol, and that of diffusion is 32 kcal/mol.

AB - Ti is deposited on single silicon wafer and then forms TiSi2 by thermal annealing in vacuum. In the steam oxidation, TiSi2 first dissociates and forms a Ti compound and SiO2. After the formation of Ti compound reaches the saturation level, the substrate Si rapidly diffuses through the TiSi2 to form SiO2, while the TiSi2 remains inert. A two-step oxidation process is thus described. The calculated activation energy of reaction is 46.2 kcal/mol, and that of diffusion is 32 kcal/mol.

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UR - https://www.scopus.com/pages/publications/0343188887#tab=citedBy

U2 - 10.1063/1.92094

DO - 10.1063/1.92094

M3 - Article

AN - SCOPUS:0343188887

SN - 0003-6951

VL - 37

SP - 824

EP - 826

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Oxidation mechanisms in TiSi₂ films on single silicon substrates

Abstract

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