The oxidation resistance and mechanical properties of Ta-Si-N films at high temperature are important issues for application. In this paper, quasi-amorphous Ta-Si-N thin films were fabricated by using reactive magnetron co-sputtering at different Si/Ta power ratios and nitrogen flow ratios (FN2%=FN2/(FAr+FN2)×100%). Vacuum rapid thermal annealing at 600-900°C at 2.6Pa was performed to investigate the oxidation resistance of films. At the higher Si/Ta power ratio and increased FN2%, there is low oxygen fraction (O/(O+N)≤0.2) of films at high annealing temperature which corresponds to benefit oxidation resistance. The crystalline δ-Ta2O5 phase was formed at 900°C for all films. The islands of oxide were formed on the surface of films at low-Si-content (≥20at.%) after 900°C annealing. The hardness of all as-deposited Ta-Si-N films was between 16 and 24GPa. The low-Si-content Ta-Si-N films has higher hardness than high-Si-content (≥20at.%) ones due to lower fraction of soft amorphous SiNx. The effect of annealing temperature on the correlation among process parameters, microstructure, phase transformation and hardness is discussed. The Ta-Si-N formed at 6 FN2% and Si/Ta power ratio of 2/1 can be the best candidate for good oxidation resistance with appropriate mechanical property.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry