Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor

Meng Fu Tsai, Jie Jiang, Pao Wen Shao, Yu Hong Lai, Jhih Wei Chen, Sheng Zhu Ho, Yi Chun Chen, Din Ping Tsai, Ying Hao Chu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

With the rise of Internet of Things, the presence of flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing the advantages of high speed, nondestructive readout, and low-power consumption, plays a key role in next-generation technology. However, the performance of these devices is restricted since conventional flexible substrates show poor thermal stability to integrate traditional ferroelectric materials, limiting the compatibility of wearable devices. In this study, we adopt flexible muscovite mica as a substrate due to its good thermal properties and epitaxial integration ability. A flexible FeFET composed of oxide heteroepitaxy on muscovite is realized by combining an aluminum-doped zinc oxide film as the semiconductor channel layer and a Pb(Zr0.7Ti0.3)O3 film as the ferroelectric gate dielectric. The excellent characteristics of the transistor together with superior thermal stability and mechanical flexibility are demonstrated through various mechanical bending and temperature measurements. The on/off current ratio of the FeFET is higher than 103, which based on the field effect in the transfer curve. The smallest bending radius that can be achieved is 5 mm with a cyclability of 300 times and a retention of 100 h. This study opens an avenue to use oxide heteroepitaxy to construct a FeFET for next-generation flexible electronic systems.

Original languageEnglish
Pages (from-to)25882-25890
Number of pages9
JournalACS Applied Materials and Interfaces
Volume11
Issue number29
DOIs
Publication statusPublished - 2019

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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