TY - GEN
T1 - Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices
AU - Duenow, Joel N.
AU - Dhere, Ramesh G.
AU - Kuciauskas, Darius
AU - Li, Jian V.
AU - Pankow, Joel W.
AU - Dippo, Patricia C.
AU - Dehart, Clay M.
AU - Gessert, Timothy A.
PY - 2012
Y1 - 2012
N2 - Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower (6%-8%) than those of high-performance superstrate devices (17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl 2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.
AB - Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower (6%-8%) than those of high-performance superstrate devices (17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl 2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.
UR - http://www.scopus.com/inward/record.url?scp=84869396001&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869396001&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2012.6318264
DO - 10.1109/PVSC.2012.6318264
M3 - Conference contribution
AN - SCOPUS:84869396001
SN - 9781467300643
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3225
EP - 3229
BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Y2 - 3 June 2012 through 8 June 2012
ER -