Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices

Joel N. Duenow; Ramesh G. Dhere; Darius Kuciauskas; Jian V. Li; Joel W. Pankow; Patricia C. Dippo; Clay M. Dehart; Timothy A. Gessert

doi:10.1109/PVSC.2012.6318264

Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices

Joel N. Duenow
, Ramesh G. Dhere
, Darius Kuciauskas
, Jian V. Li
, Joel W. Pankow
, Patricia C. Dippo
, Clay M. Dehart
, Timothy A. Gessert

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower (6%-8%) than those of high-performance superstrate devices (17%) because of significantly lower open-circuit voltage (V_oc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl ₂ heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved V_oc values greater than 860 mV and efficiencies greater than 10%.

Original language	English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	3225-3229
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2012.6318264
Publication status	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 2012 Jun 3 → 2012 Jun 8

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	12-06-03 → 12-06-08

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2012.6318264

Cite this

Duenow, J. N., Dhere, R. G., Kuciauskas, D., Li, J. V., Pankow, J. W., Dippo, P. C., Dehart, C. M., & Gessert, T. A. (2012). Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 3225-3229). Article 6318264 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6318264

@inproceedings{dc1e41f544f74617bfacdd141d864e85,

title = "Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices",

abstract = "Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower (6\%-8\%) than those of high-performance superstrate devices (17\%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl 2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10\%.",

author = "Duenow, \{Joel N.\} and Dhere, \{Ramesh G.\} and Darius Kuciauskas and Li, \{Jian V.\} and Pankow, \{Joel W.\} and Dippo, \{Patricia C.\} and Dehart, \{Clay M.\} and Gessert, \{Timothy A.\}",

year = "2012",

doi = "10.1109/PVSC.2012.6318264",

language = "English",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "3225--3229",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Duenow, JN, Dhere, RG, Kuciauskas, D, Li, JV, Pankow, JW, Dippo, PC, Dehart, CM & Gessert, TA 2012, Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6318264, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 3225-3229, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 12-06-03. https://doi.org/10.1109/PVSC.2012.6318264

Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices. / Duenow, Joel N.; Dhere, Ramesh G.; Kuciauskas, Darius et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 3225-3229 6318264 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices

AU - Duenow, Joel N.

AU - Dhere, Ramesh G.

AU - Kuciauskas, Darius

AU - Li, Jian V.

AU - Pankow, Joel W.

AU - Dippo, Patricia C.

AU - Dehart, Clay M.

AU - Gessert, Timothy A.

PY - 2012

Y1 - 2012

N2 - Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower (6%-8%) than those of high-performance superstrate devices (17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl 2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

AB - Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower (6%-8%) than those of high-performance superstrate devices (17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl 2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

UR - https://www.scopus.com/pages/publications/84869396001

UR - https://www.scopus.com/pages/publications/84869396001#tab=citedBy

U2 - 10.1109/PVSC.2012.6318264

DO - 10.1109/PVSC.2012.6318264

M3 - Conference contribution

AN - SCOPUS:84869396001

SN - 9781467300643

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 3225

EP - 3229

BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices

Abstract

Publication series

Other

UN SDGs

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this