This paper presents a novel low power consumption gate driver circuit with 12 TFTs and one capacitor which is made by hydrogenated amorphous silicon technology. The pull-down structure can not only prevent the floating of gate lines, but also suppress the threshold voltage shift of a-Si:H TFTs. According to the measurement results, the proposed gate driver circuit can be operated stably more than 10 days at high temperature (T = 100 ° C). Furthermore, the power consumption of the proposed gate driver circuit can be reduced 52.6% compared to the previously proposed gate driver circuit.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2011 Jun|
All Science Journal Classification (ASJC) codes