An inverted or p-down InGaN/GaN multiple quantum wells (MQW) light-emitting diode (LED) structure is studied. The crystalline quality of the quantum wells is comparable to that of the n-down structure by using a Si or In co-doped GaN:Mg layer underneath the active layer. It was found that I-V characteristics can be improved by insertion of a tunnel layer, either a 3D growth GaN:Mg layer or an AlGaN/GaN superlattice layer. The feasibility of such a structure for practical application is also evaluated by luminescence measurement.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - 2002 Apr|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)