P-down InGaN/GaN multiple quantum wells light-emitting diode structure grown by metal-organic vapor-phase epitaxy

Chih Hsin Ko, Yan Kuin Su, Shoou Jinn Chang, Ta Ming Kuan, Chung I. Chiang, Wen How Lan, Wen Jen Lin, James Webb

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

An inverted or p-down InGaN/GaN multiple quantum wells (MQW) light-emitting diode (LED) structure is studied. The crystalline quality of the quantum wells is comparable to that of the n-down structure by using a Si or In co-doped GaN:Mg layer underneath the active layer. It was found that I-V characteristics can be improved by insertion of a tunnel layer, either a 3D growth GaN:Mg layer or an AlGaN/GaN superlattice layer. The feasibility of such a structure for practical application is also evaluated by luminescence measurement.

Original languageEnglish
Pages (from-to)2489-2492
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number4 B
DOIs
Publication statusPublished - 2002 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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