P-MOSFET and n-MOSFET Prepared by ICP-Assisted Hot Wire Implantation Doping Technique

Y. H. Chen, S. J. Chang, C. J. Wu, T. J. Hsueh

Research output: Contribution to journalArticlepeer-review

Abstract

In this letter, p-type and n-type metal-oxide- semiconductor field-effect transistors (MOSFETs) were fabricated using an inductively coupled plasma-assisted hot wire implantation doping technique. A complementary metal-oxide- semiconductor (CMOS) device that combines p- and n-MOSFETs was also fabricated. The obtained junction depth of the p-MOSFETs was ~ 45 nm. The subthreshold slope and ON-OFF current ratio of the p-MOSFET were ~0.18 V/decade and over 104, respectively. The measurements made of the CMOS device show that it is a good inverter.

Original languageEnglish
Article number7452555
Pages (from-to)698-700
Number of pages3
JournalIEEE Electron Device Letters
Volume37
Issue number6
DOIs
Publication statusPublished - 2016 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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