P-MOSFET and n-MOSFET Prepared by ICP-Assisted Hot Wire Implantation Doping Technique

Y. H. Chen; S. J. Chang; C. J. Wu; T. J. Hsueh

doi:10.1109/LED.2016.2554144

P-MOSFET and n-MOSFET Prepared by ICP-Assisted Hot Wire Implantation Doping Technique

Y. H. Chen, S. J. Chang, C. J. Wu, T. J. Hsueh

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, p-type and n-type metal-oxide- semiconductor field-effect transistors (MOSFETs) were fabricated using an inductively coupled plasma-assisted hot wire implantation doping technique. A complementary metal-oxide- semiconductor (CMOS) device that combines p- and n-MOSFETs was also fabricated. The obtained junction depth of the p-MOSFETs was ~ 45 nm. The subthreshold slope and ON-OFF current ratio of the p-MOSFET were ~0.18 V/decade and over 10⁴, respectively. The measurements made of the CMOS device show that it is a good inverter.

Original language	English
Article number	7452555
Pages (from-to)	698-700
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	37
Issue number	6
DOIs	https://doi.org/10.1109/LED.2016.2554144
Publication status	Published - 2016 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2016.2554144

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title = "P-MOSFET and n-MOSFET Prepared by ICP-Assisted Hot Wire Implantation Doping Technique",

abstract = "In this letter, p-type and n-type metal-oxide- semiconductor field-effect transistors (MOSFETs) were fabricated using an inductively coupled plasma-assisted hot wire implantation doping technique. A complementary metal-oxide- semiconductor (CMOS) device that combines p- and n-MOSFETs was also fabricated. The obtained junction depth of the p-MOSFETs was ~ 45 nm. The subthreshold slope and ON-OFF current ratio of the p-MOSFET were ~0.18 V/decade and over 104, respectively. The measurements made of the CMOS device show that it is a good inverter.",

author = "Chen, {Y. H.} and Chang, {S. J.} and Wu, {C. J.} and Hsueh, {T. J.}",

note = "Funding Information: This work was supported in part by the Ministry of Science and Technology, Taiwan, under Grant 103-2221-E-492-047-MY3, and in part by National Nano Devices Laboratories, Tainan, Taiwan. Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2016",

month = jun,

doi = "10.1109/LED.2016.2554144",

language = "English",

volume = "37",

pages = "698--700",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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AU - Chen, Y. H.

AU - Chang, S. J.

AU - Wu, C. J.

AU - Hsueh, T. J.

N1 - Funding Information: This work was supported in part by the Ministry of Science and Technology, Taiwan, under Grant 103-2221-E-492-047-MY3, and in part by National Nano Devices Laboratories, Tainan, Taiwan. Publisher Copyright: © 1980-2012 IEEE.

PY - 2016/6

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N2 - In this letter, p-type and n-type metal-oxide- semiconductor field-effect transistors (MOSFETs) were fabricated using an inductively coupled plasma-assisted hot wire implantation doping technique. A complementary metal-oxide- semiconductor (CMOS) device that combines p- and n-MOSFETs was also fabricated. The obtained junction depth of the p-MOSFETs was ~ 45 nm. The subthreshold slope and ON-OFF current ratio of the p-MOSFET were ~0.18 V/decade and over 104, respectively. The measurements made of the CMOS device show that it is a good inverter.

AB - In this letter, p-type and n-type metal-oxide- semiconductor field-effect transistors (MOSFETs) were fabricated using an inductively coupled plasma-assisted hot wire implantation doping technique. A complementary metal-oxide- semiconductor (CMOS) device that combines p- and n-MOSFETs was also fabricated. The obtained junction depth of the p-MOSFETs was ~ 45 nm. The subthreshold slope and ON-OFF current ratio of the p-MOSFET were ~0.18 V/decade and over 104, respectively. The measurements made of the CMOS device show that it is a good inverter.

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P-MOSFET and n-MOSFET Prepared by ICP-Assisted Hot Wire Implantation Doping Technique

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