P-type delta-doped SiGe/Si heterostructure field effect transistors

P. W. Chien, S. L. Wu, S. C. Lee, Shoou-Jinn Chang, H. Miura, S. Koh, Y. Shiraki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

P-type SiGe/Si HFETs with different position of the δ-doped layer in the SiGe channel are reported for the first time. For the same device structure with a 1 × 100 μm 2 gate, bottom-delta-doped-channel devices display a wide and flat range of uniform g m distribution of 1.4 V, and 0.9 V in top-delta-doped-channel devices. Compared to the latter devices, a high gate-to-drain breakdown voltage (>25 V) due to a better carrier confinement together with a higher current density for the bottom-delta-doped-channel devices was obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.

Original languageEnglish
Pages (from-to)1289-1291
Number of pages3
JournalElectronics Letters
Volume38
Issue number21
DOIs
Publication statusPublished - 2002 Oct 10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'P-type delta-doped SiGe/Si heterostructure field effect transistors'. Together they form a unique fingerprint.

Cite this