Abstract
P-type SiGe/Si HFETs with different position of the δ-doped layer in the SiGe channel are reported for the first time. For the same device structure with a 1 × 100 μm 2 gate, bottom-delta-doped-channel devices display a wide and flat range of uniform g m distribution of 1.4 V, and 0.9 V in top-delta-doped-channel devices. Compared to the latter devices, a high gate-to-drain breakdown voltage (>25 V) due to a better carrier confinement together with a higher current density for the bottom-delta-doped-channel devices was obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.
Original language | English |
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Pages (from-to) | 1289-1291 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 38 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2002 Oct 10 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering