P-type enhancement-mode SiGe doped-channel field-effect transistor

Yu Min Lin, San Lein Wu, Shoou Jinn Chang, Shinji Koh, Yasuhiro Shiraki

Research output: Contribution to journalLetterpeer-review

2 Citations (Scopus)


In this paper, we report, for the first time, the fabrication and characterization of p-type doped-channel Si/SiGe field-effect transistors (DCFETs) using uniformly doping and delta doping in the SiGe conducting channel. For the same device parameters and process conditions, the δ-DCFET is shown having much smaller leakage current and larger current drivability than uniformly doped-channel FET (u-DCFET). This is because the additional V-shaped potential formed well by the δ-doped layer in the SiGe layer offers an excellent channel hole confinement and the larger forward turn-on voltage promises a linear operation over a wider dynamic range than that of u-DCFET.

Original languageEnglish
Pages (from-to)L1422-L1424
JournalJapanese Journal of Applied Physics
Issue number12 A
Publication statusPublished - 2003 Dec 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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