In this paper, we report, for the first time, the fabrication and characterization of p-type doped-channel Si/SiGe field-effect transistors (DCFETs) using uniformly doping and delta doping in the SiGe conducting channel. For the same device parameters and process conditions, the δ-DCFET is shown having much smaller leakage current and larger current drivability than uniformly doped-channel FET (u-DCFET). This is because the additional V-shaped potential formed well by the δ-doped layer in the SiGe layer offers an excellent channel hole confinement and the larger forward turn-on voltage promises a linear operation over a wider dynamic range than that of u-DCFET.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)