TY - JOUR
T1 - P-type ZnO thin-film transistors and passivation using photoelectrochemical oxidation method
AU - Lee, Ching Ting
AU - Lin, Yung Hao
PY - 2014/1/1
Y1 - 2014/1/1
N2 - A high-performance stable i-ZnO buffer layer and p-ZnO channel layer for p-ZnO thin-film transistors (TFTs) were deposited using vapor cooling condensation. The resulting p-ZnO TFTs had a transconductance of 1.87 × 10-6 S, saturation drain-source current of-14.1 μA, and field-effect mobility of 7.12cm2V-1 s-1. To improve the performance, the channel layer was passivated using photoelectrochemical oxidation. The transconductance, saturation drain-source current, and field-effect mobility of the passivated TFTs were improved to 2.05 × 10-6 S,-16.0 μA, and 7.83cm2V-1 s-1, respectively. The performance improvement was attributed to the reduced interface state density obtained by passivation.
AB - A high-performance stable i-ZnO buffer layer and p-ZnO channel layer for p-ZnO thin-film transistors (TFTs) were deposited using vapor cooling condensation. The resulting p-ZnO TFTs had a transconductance of 1.87 × 10-6 S, saturation drain-source current of-14.1 μA, and field-effect mobility of 7.12cm2V-1 s-1. To improve the performance, the channel layer was passivated using photoelectrochemical oxidation. The transconductance, saturation drain-source current, and field-effect mobility of the passivated TFTs were improved to 2.05 × 10-6 S,-16.0 μA, and 7.83cm2V-1 s-1, respectively. The performance improvement was attributed to the reduced interface state density obtained by passivation.
UR - http://www.scopus.com/inward/record.url?scp=84904615316&partnerID=8YFLogxK
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U2 - 10.7567/APEX.7.076502
DO - 10.7567/APEX.7.076502
M3 - Article
AN - SCOPUS:84904615316
VL - 7
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 7
M1 - 076502
ER -