A high-performance stable i-ZnO buffer layer and p-ZnO channel layer for p-ZnO thin-film transistors (TFTs) were deposited using vapor cooling condensation. The resulting p-ZnO TFTs had a transconductance of 1.87 × 10-6 S, saturation drain-source current of-14.1 μA, and field-effect mobility of 7.12cm2V-1 s-1. To improve the performance, the channel layer was passivated using photoelectrochemical oxidation. The transconductance, saturation drain-source current, and field-effect mobility of the passivated TFTs were improved to 2.05 × 10-6 S,-16.0 μA, and 7.83cm2V-1 s-1, respectively. The performance improvement was attributed to the reduced interface state density obtained by passivation.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)