Abstract
Multifunctional and reconfigurable optoelectronic circuits capable of performing both logic operations and wavelength-dependent sensing are essential for the development of adaptive electronic systems. An optoelectronic platform is proposed that consisting of only two serially connected thin-film transistors (TFTs), where one is a wide-bandgap ZTO TFT and the other is a narrow-bandgap AgxO/ZTO heterojunction TFT. By applying appropriate gate biases, the circuit enables logic operations, including NAND and NOR gates, without the need for additional transistors. Uniquely, instead of conventional photocurrent-based detection, which often suffers from ambiguity when weak short-wavelength light and strong long-wavelength light irradiate the photodetector and induce similar photocurrent magnitudes, the architecture distinguishes the wavelength of LASER via the output voltage (Vout) extracted from the intermediate node between the two TFTs. Under fixed biasing and illumination by 405, 520, and 670 nm LASER, Vout exhibits wavelength-dependent variations that correspond to a photo-modulated voltage division. These responses are consistently explained by the distinct light absorption and resistance modulation of each TFT. This voltage-based sensing strategy overcomes limitations of photocurrent degeneracy and enables reliable color recognition within the same paired-TFT architecture. The integration of logic operations and optical discrimination within a series-integrated architecture offers a promising route toward reconfigurable optoelectronic systems.
| Original language | English |
|---|---|
| Article number | e03101 |
| Journal | Advanced Optical Materials |
| Volume | 14 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2026 Jan 19 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
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