@inproceedings{9aa025b5ceaf47c890cfbb098704f731,
title = "Parameter optimization of PT-IGBT breakdown voltage",
abstract = "This paper discusses the benefits of different N-drift doping concentration and terminal guard ring diversification on PT-IGBT(Punch Through) breakdown characteristic. The concept IGBT structure consists of MOS components and bipolar components. The former provided by the high-frequency effect, which provides high voltage. In order to increase the breakdown voltage, the N-drift layer concentration needs to be reduced, caused slower on/off switching loss, thermal issue, and power energy loss. The structure optimization is presented and its functionality is verified by 2D simulations with SILVACO TCAD.",
author = "Shih, {Tzu Lang} and Chang, {Chih Chuan} and Lee, {Wen Hsi}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",
year = "2014",
month = jan,
day = "23",
doi = "10.1109/ICSICT.2014.7021688",
language = "English",
series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Jia Zhou and Ting-Ao Tang",
booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
address = "United States",
}