Passivation with SiO2 on HgCdTe by direct photochemical-vapor deposition

J. D. Lin, Y. K. Su, Shoou-Jinn Chang, M. Yokoyama, F. Y. Juang

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Abstract

For the first time, Si02 layers, prepared by direct photochemical-vapor deposition, were passivated onto HgCdTe substrates using a deuterium (D2) lamp as the ultraviolet and vacuum-ultraviolet light source. It was found that the refractive index of the Si02 films, grown at 60 °C and 0.5 Torr for a mixture of SiH4 and 02, is close to 1.462 (the refractive index of thermal silicon dioxide) when the gas ratio (SiH4/02) is adjusted to 0.2. Various characterization techniques, such as x-ray photoemission, Auger-electron, and Fourier-transform spectroscopies were used to give a detailed study of the physical and chemical properties of the Si02 thin films. The electrical properties of these Si02 layers were investigated by performing high frequency (1 MHz) capacitance-voltage (C—V) and current-voltage (I-V) measurements, at 77 K. The C—V measurement shows that the minimum interface state density is 5X1010 cm-2eV-1with a hysteresis smaller than 0.2 V. The maximum dielectric strength observed from I-V measurement is around 580 kV/cm.

Original languageEnglish
Pages (from-to)7-11
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume12
Issue number1
DOIs
Publication statusPublished - 1994 Jan 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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