For the first time, Si02 layers, prepared by direct photochemical-vapor deposition, were passivated onto HgCdTe substrates using a deuterium (D2) lamp as the ultraviolet and vacuum-ultraviolet light source. It was found that the refractive index of the Si02 films, grown at 60 °C and 0.5 Torr for a mixture of SiH4 and 02, is close to 1.462 (the refractive index of thermal silicon dioxide) when the gas ratio (SiH4/02) is adjusted to 0.2. Various characterization techniques, such as x-ray photoemission, Auger-electron, and Fourier-transform spectroscopies were used to give a detailed study of the physical and chemical properties of the Si02 thin films. The electrical properties of these Si02 layers were investigated by performing high frequency (1 MHz) capacitance-voltage (C—V) and current-voltage (I-V) measurements, at 77 K. The C—V measurement shows that the minimum interface state density is 5X1010 cm-2eV-1with a hysteresis smaller than 0.2 V. The maximum dielectric strength observed from I-V measurement is around 580 kV/cm.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1994 Jan|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films